Influence of parasitic phases on the properties of BiFeO 3 epitaxial thin films

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Ba H ^a   Bibes, M ^b   Barthlmy A ^a   Bouzehouane, K ^a   Jacquet, E ^a   Khodan, A ^a   Contour, J P ^a   Fusil, S ^c   Wyczisk, F ^d   Forget, A ^e   Lebeugle, D ^e   Colson, D ^e   Viret, M ^e  

^a UNITÉ MIXTE DE PHYSIQUE CNRS THALES   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c UNIVERSITÉ D EVRY VAL D ESSONNE   (France)

^d THALES RESEARCH AND TECHNOLOGY   (France)

^e SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PHASE; FERROELECTRIC ELEMENTS; NONOPTIMAL CONDITIONS; PARASITIC PHASE;

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; FERROMAGNETISM; FILM GROWTH; HETEROJUNCTIONS; PULSED LASER DEPOSITION; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION;

THIN FILMS;

EID: 24144462513     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2009808     Document Type: Article

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