Flexible one diode-one resistor crossbar resistive-switching memory

Japanese Journal of Applied Physics

Volumn 51, Issue 4 PART 2, 2012, Pages

  Huang, Jiun Jia ^a   Hou, Tuo Hung ^a   Hsu, Chung Wei ^a   Tseng, Yi Ming ^a   Chang, Wen Hsiung ^b   Jang, Wen Yueh ^b   Lin, Chen Hsi ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; CROSSBAR ARRAYS; HIGH-DENSITY; LOW COSTS; LOW RESET CURRENTS; MEMORY CELL; MEMORY ELEMENT; POLYIMIDE SUBSTRATE; READ DISTURB; RESISTIVE SWITCHING MEMORIES; RESISTOR CROSSBARS; ROOM-TEMPERATURE PROCESS; SERIES RESISTANCES; TIO;

ELECTRIC RESISTANCE; HAFNIUM OXIDES; PLATINUM; POLYIMIDES; RESISTORS; TITANIUM DIOXIDE;

DIODES;

EID: 84860367976     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.04DD09     Document Type: Article

References (19)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono: Nature 432 (2004) 488.
2. C. H. Cheng, F. S. Yeh, and A. Chin: Adv. Mater. 23 (2011) 902.
3. N. G. Hackett, B. Hamadni, B. Dunlap, J. Suehle, C. Richter, C. Hacker, and D. Gundlach: IEEE Electron Device Lett. 30 (2009) 706.
4. C. W. Hsu, J. J. Huang, Y. M. Tseng, T. H. Hou, W. H. Chang, W. Y. Jang, and C. H. Lin: Ext. Abstr. Solid State Devices and Materials, 2011, p. 1015.
5. R. Waser, R. Dittmann, G. Staikov, and K. Szot: Adv. Mater. 21 (2009) 2632.
6. A. Flocke and T. G. Noll: Proc. 33rd European Solid-State Circuits Conf., 2007, p. 328.
7. J. Liang and H. S. P. Wong: IEEE Trans. Electron Devices 57 (2010) 2531.
8. C. W. Kuo, J. J. Huang, W. C. Chang, and T. H. Hou: Ext. Abstr. Solid State Devices and Materials, 2010, p. 311.
9. J. J. Huang, C. W. Kuo, W. C. Chang, and T. H. Hou: Appl. Phys. Lett. 96 (2010) 262901.
10. I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu: IEDM Tech. Dig., 2005, p. 750.
11. M. J. Lee, Y. Park, B. S. Kang, S. E. Ahn, C. B. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. H. Lee, S. J. Chung, Y. H. Jim, C. S. Lee, and J. B. Park: IEDM Tech. Dig., 2007, p. 771.
12. G. Tallarida, N. Huby, B. Kutrzeba-Kotowska, S. Spiga, M. Arcari, G. Csaba, and P. Lugli: Int. Memory Workshop, 2009, p. 1.
13. K. L. Lin, T. H. Hou, J. Shieh, J. H. Lin, C. T. Chou, and Y. J. Lee: J. Appl. Phys. 109 (2011) 084104.
14. N. Raghavan, W. Liu, X. Li, X. Wu, M. Bosman, and K. L. Pey: IEEE Electron Device Lett. 32 (2011) 455.
15. X. A. Tran, B. Gao, J. F. Kang, L. Wu, Z. R. Wang, Z. Fang, K. L. Pey, Y. C. Yeo, A. Y. Du, B. Y. Nguyen, M. F. Li, and H. Y. Yu: Symp. VLSI Technology, 2011, p. 44.
16. W. S. Chen, Y. S. Chen, Y. Y. Hsu, S. Y. Yang, W. H. Liu, H. Y. Lee, P. Y. Gu, C. H. Tsai, S. M. Wang, P. S. Chen, Y. H. Wang, F. T. Chen, and M.-J. Tsai: Symp. VLSI Technology, Systems and Applications, 2011, p. 102.
17. G. H. Kim, K. M. Kim, J. Y. Seok, H. J. Lee, D. Y. Cho, J. H. Han, and C. S. Hwang: NanoTechnology 21 (2010) 385202.
18. E. Linn, R. Rosezin, C. Kügeler, and R. Waser: Nat. Mater. 9 (2010) 403.
19. J. J. Huang, Y. M. Tseng, C. W. Hsu, and T. H. Hou: IEEE Electron Device Lett. 32 (2011) 1427.