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Volumn 98, Issue 19, 2011, Pages

Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

(9) Wang, Can a Jin, Kui Juan a Xu, Zhong Tang a Wang, Le a Ge, Chen a Lu, Hui Bin a Guo, Hai Zhong a He, Meng a Yang, Guo Zhen a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; DIODE EFFECTS; FERROELECTRIC SWITCHING; METALLIC ELECTRODES; MULTIFERROICS; POLARIZATION SWITCHING; POLARIZATION-MODULATED; POTENTIAL BARRIERS; RECTIFYING CHARACTERISTICS; RESISTIVE SWITCHING; SWITCHABLE;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; DISTILLATION; EPITAXIAL GROWTH; FERROELECTRICITY; POLARIZATION; SWITCHING; SWITCHING SYSTEMS; THIN FILMS;

FERROELECTRIC FILMS;

EID: 79959678468 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3589814 Document Type: Article

Times cited : (347)

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