Nonvolatile multilevel resistive switching in Ar+ Irradiated BiFeO3 thin films

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 54-56

  Shuai, Y ^a   Ou, X ^b   Luo, W ^a   Du, N ^c   Wu, C ^a   Zhang, W ^a   Burger, D ^b   Mayr, C ^d   Schuffny, R ^d   Zhou, S ^b   Helm, M ^b   Schmidt, H ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Irradiation; rectifying; resistive switching (RS)

Indexed keywords

CAPACITOR STRUCTURES; CONDUCTION MECHANISM; CURRENT-VOLTAGE MEASUREMENTS; INTERMEDIATE RESISTANCE; LOW-ENERGY AR; NON-VOLATILE; RECTIFYING; RESISTANCE DEGRADATION; RESISTANCE STATE; RESISTIVE SWITCHING; ROOM TEMPERATURE; TEMPERATURE DEPENDENT;

IRRADIATION; PLATINUM; SWITCHING SYSTEMS; THIN FILMS;

VAPOR DEPOSITION;

EID: 84871756286     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2227666     Document Type: Article

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