SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

Nonpolar resistive switching in Mn-doped BiFeO 3 thin films by chemical solution deposition

(4) Luo, J M a Lin, S P a Zheng, Yue a Wang, B a

a SUN YAT SEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; CURRENT-VOLTAGE RELATIONSHIP; DEFECT CHEMISTRY; MN-DOPED BIFEO; NANO SCALE; NON-POLAR; NON-VOLATILE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SPACE-CHARGE-LIMITED CURRENT;

ELECTRIC CONDUCTIVITY; MANGANESE; MANGANESE OXIDE; OXYGEN VACANCIES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

SWITCHING SYSTEMS;

EID: 84865133607 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742897 Document Type: Article

Times cited : (117)

References (26)

1
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. (Weinheim, Ger.) , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

2
- 35748974883
- 10.1038/nmat2023
- R. Waser and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023
- (2007) Nature Mater. , vol.6 , pp. 833
- Waser, R.¹ Aono, M.²

3
- 43549126477
- 10.1016/S1369-7021(08)70119-6
- A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6
- (2008) Mater. Today , vol.11 , pp. 28
- Sawa, A.¹

4
- 84865446829
- 10.1038/srep00223
- L. Y. Wang, D. H. Wang, Q. Q. Cao, Y. X. Zheng, H. C. Xuan, J. L. Gao, and Y. W. Du, Sci. Rep. 2, 223 (2012). 10.1038/srep00223
- (2012) Sci. Rep. , vol.2 , pp. 223
- Wang, L.Y.¹ Wang, D.H.² Cao, Q.Q.³ Zheng, Y.X.⁴ Xuan, H.C.⁵ Gao, J.L.⁶ Du, Y.W.⁷

5
- 46749093701
- 10.1038/nnano.2008.160
- J. Yang, M. D. Pickett, X. M. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 3, 429 (2008). 10.1038/nnano.2008.160
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429
- Yang, J.¹ Pickett, M.D.² Li, X.M.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

6
- 19744383252
- 10.1063/1.1845598
- T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005). 10.1063/1.1845598
- (2005) Appl. Phys. Lett. , vol.86 , pp. 012107
- Fujii, T.¹ Kawasaki, M.² Sawa, A.³ Akoh, H.⁴ Kawazoe, Y.⁵ Tokura, Y.⁶

7
- 33846257227
- 10.1063/1.2430912
- Y. Xia, W. He, L. Chen, X. Meng, and Z. Liu, Appl. Phys. Lett. 90, 022907 (2007). 10.1063/1.2430912
- (2007) Appl. Phys. Lett. , vol.90 , pp. 022907
- Xia, Y.¹ He, W.² Chen, L.³ Meng, X.⁴ Liu, Z.⁵

8
- 65249109266
- 10.1088/0957-4484/20/7/075401
- Y. Zheng and C. H. Woo, Nanotechnology 20, 075401 (2009); 10.1088/0957-4484/20/7/075401
- (2009) Nanotechnology , vol.20 , pp. 075401
- Zheng, Y.¹ Woo, C.H.²

9
- 79952924705
- 10.1021/nn1031438
- X. Luo, B. Wang, and Y. Zheng, ACS Nano 5, 1649 (2011). 10.1021/nn1031438
- (2011) ACS Nano , vol.5 , pp. 1649
- Luo, X.¹ Wang, B.² Zheng, Y.³

10
- 84856874706
- 10.1038/nnano.2011.213
- A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, J. Allibe, B. Dlubak, J. Grollier, S. Xavier, C. Deranlot, A. Moshar, R. Proksch, N. D. Mathur, M. Bibes, and A. Barthelemy, Nat. Nanotechnol. 7, 101 (2011). 10.1038/nnano.2011.213
- (2011) Nat. Nanotechnol. , vol.7 , pp. 101
- Chanthbouala, A.¹ Crassous, A.² Garcia, V.³ Bouzehouane, K.⁴ Fusil, S.⁵ Moya, X.⁶ Allibe, J.⁷ Dlubak, B.⁸ Grollier, J.⁹ Xavier, S.¹⁰ Deranlot, C.¹¹ Moshar, A.¹² Proksch, R.¹³ Mathur, N.D.¹⁴ Bibes, M.¹⁵ Barthelemy, A.¹⁶

11
- 77955725082
- 10.1063/1.3467838
- K. Yin, M. Li, Y. Liu, C. He, F. Zhuge, B. Chen, W. Lu, X. Pan, and R. W. Li, Appl. Phys. Lett. 97, 042101 (2010). 10.1063/1.3467838
- (2010) Appl. Phys. Lett. , vol.97 , pp. 042101
- Yin, K.¹ Li, M.² Liu, Y.³ He, C.⁴ Zhuge, F.⁵ Chen, B.⁶ Lu, W.⁷ Pan, X.⁸ Li, R.W.⁹

12
- 79960185107
- 10.1063/1.3601113
- Y. Shuai, S. Zhou, D. Bürger, M. Helm, and H. Schmidt, J. Appl. Phys. 109, 124117 (2011). 10.1063/1.3601113
- (2011) J. Appl. Phys. , vol.109 , pp. 124117
- Shuai, Y.¹ Zhou, S.² Bürger, D.³ Helm, M.⁴ Schmidt, H.⁵

13
- 67349117817
- 10.1038/nmat2432
- C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin, and R. Ramesh, Nature Mater. 8, 485 (2009). 10.1038/nmat2432
- (2009) Nature Mater. , vol.8 , pp. 485
- Yang, C.H.¹ Seidel, J.² Kim, S.Y.³ Rossen, P.B.⁴ Yu, P.⁵ Gajek, M.⁶ Chu, Y.H.⁷ Martin, L.W.⁸ Holcomb, M.B.⁹ He, Q.¹⁰ Maksymovych, P.¹¹ Balke, N.¹² Kalinin, S.V.¹³ Baddorf, A.P.¹⁴ Basu, S.R.¹⁵ Scullin, M.L.¹⁶ Ramesh, R.¹⁷

14
- 77958581512
- 10.1088/0957-4484/21/42/425202
- M. Li, F. Zhuge, X. Zhu, K. Yin, J. Wang, Y. Liu, C. He, B. Chen, and R. W. Li, Nanotechnology 21, 425202 (2010). 10.1088/0957-4484/21/42/425202
- (2010) Nanotechnology , vol.21 , pp. 425202
- Li, M.¹ Zhuge, F.² Zhu, X.³ Yin, K.⁴ Wang, J.⁵ Liu, Y.⁶ He, C.⁷ Chen, B.⁸ Li, R.W.⁹

15
- 80053375590
- 10.1088/0022-3727/44/41/415104
- X. Zhu, F. Zhuge, M. Li, K. Yin, Y. Liu, Z. Zuo, B. Chen, and R. W. Li, J. Phys. D: Appl. Phys. 44, 415104 (2011). 10.1088/0022-3727/44/41/415104
- (2011) J. Phys. D: Appl. Phys. , vol.44 , pp. 415104
- Zhu, X.¹ Zhuge, F.² Li, M.³ Yin, K.⁴ Liu, Y.⁵ Zuo, Z.⁶ Chen, B.⁷ Li, R.W.⁸

16
- 0037436499
- 10.1126/science.1080615
- J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003). 10.1126/science. 1080615
- (2003) Science , vol.299 , pp. 1719
- Wang, J.¹ Neaton, J.B.² Zheng, H.³ Nagarajan, V.⁴ Ogale, S.B.⁵ Liu, B.⁶ Viehland, D.⁷ Vaithyanathan, V.⁸ Schlom, D.G.⁹ Waghmare, U.V.¹⁰ Spaldin, N.A.¹¹ Rabe, K.M.¹² Wuttig, M.¹³ Ramesh, R.¹⁴

17
- 33745625140
- 10.1063/1.2218819
- S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. 88, 262908 (2006). 10.1063/1.2218819
- (2006) Appl. Phys. Lett. , vol.88 , pp. 262908
- Singh, S.K.¹ Ishiwara, H.² Maruyama, K.³

18
- 36248930886
- 10.1063/1.2812594
- S. K. Singh, H. Ishiwara, K. Sato, and K. Maruyama, J. Appl. Phys. 102, 094109 (2007). 10.1063/1.2812594
- (2007) J. Appl. Phys. , vol.102 , pp. 094109
- Singh, S.K.¹ Ishiwara, H.² Sato, K.³ Maruyama, K.⁴

19
- 0003538683
- (Methuen, London).
- D. R. Lamb, Electric Conduction Mechanisms in Thin Insulating Films (Methuen, London, 1967).
- (1967) Electric Conduction Mechanisms in Thin Insulating Films
- Lamb, D.R.¹

20
- 0003496621
- (VEB Deutscher Verlag der Wissenschaften, Berlin).
- C. Hamann, H. Burghardt, and T. Frauenheim, Electrical Conduction Mechanisms in Solids (VEB Deutscher Verlag der Wissenschaften, Berlin, 1988).
- (1988) Electrical Conduction Mechanisms in Solids
- Hamann, C.¹ Burghardt, H.² Frauenheim, T.³

21
- 80054997794
- 10.1063/1.3647777
- H. J. Lee, M. H. Park, Y. J. Kim, C. S. Hwang, J. H. Kim, H. Funakubo, and H. Ishiwara, J. Appl. Phys. 110, 074111 (2011). 10.1063/1.3647777
- (2011) J. Appl. Phys. , vol.110 , pp. 074111
- Lee, H.J.¹ Park, M.H.² Kim, Y.J.³ Hwang, C.S.⁴ Kim, J.H.⁵ Funakubo, H.⁶ Ishiwara, H.⁷

22
- 70149124047
- 10.1088/0022-3727/42/16/162001
- Y. Wang and J. Wang, J. Phys. D: Appl. Phys. 42, 162001 (2009). 10.1088/0022-3727/42/16/162001
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 162001
- Wang, Y.¹ Wang, J.²

23
- 33646701019
- 10.1063/1.2191947
- Y. Wang, Q. H. Jiang, H. C. He, and C. W. Nan, Appl. Phys. Lett. 88, 142503 (2006). 10.1063/1.2191947
- (2006) Appl. Phys. Lett. , vol.88 , pp. 142503
- Wang, Y.¹ Jiang, Q.H.² He, H.C.³ Nan, C.W.⁴

24
- 79956084549
- 10.1088/0957-4484/22/25/254010
- K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, Nanotechnology 22, 254010 (2011). 10.1088/0957-4484/22/25/254010
- (2011) Nanotechnology , vol.22 , pp. 254010
- Kim, K.M.¹ Choi, B.J.² Lee, M.H.³ Kim, G.H.⁴ Song, S.J.⁵ Seok, J.Y.⁶ Yoon, J.H.⁷ Han, S.⁸ Hwang, C.S.⁹

25
- 77954321120
- 10.1063/1.3456379
- M. C. Chen, T. C. Chang, C. T. Tsai, S. Y. Huang, S. C. Chen, C. W. Hu, S. M. Sze, and M. J. Tsai, Appl. Phys. Lett. 96, 262110 (2010). 10.1063/1.3456379
- (2010) Appl. Phys. Lett. , vol.96 , pp. 262110
- Chen, M.C.¹ Chang, T.C.² Tsai, C.T.³ Huang, S.Y.⁴ Chen, S.C.⁵ Hu, C.W.⁶ Sze, S.M.⁷ Tsai, M.J.⁸

26
- 22144448904
- 10.1063/1.1968416
- C. Rhode, B. J. Choi, D. S. Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 86, 262907 (2005). 10.1063/1.1968416
- (2005) Appl. Phys. Lett. , vol.86 , pp. 262907
- Rhode, C.¹ Choi, B.J.² Jeong, D.S.³ Choi, S.⁴ Zhao, J.-S.⁵ Hwang, C.S.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.