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Volumn , Issue , 2013, Pages 282-293

Accelerating write by exploiting PCM asymmetries

Author keywords

[No Author keywords available]

Indexed keywords

CODING SCHEME; ELECTRICAL CURRENT; LATENCY REDUCTION; MEMORY LATENCIES; MULTI-CORE PROCESSOR; PERFORMANCE IMPROVEMENTS; POWER CONSTRAINTS;

EID: 84880277126     PISSN: 15300897     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HPCA.2013.6522326     Document Type: Conference Paper
Times cited : (128)

References (30)
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    • Aug
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    • (2010) Computers, IEEE Transactions on , vol.59 , Issue.8 , pp. 1033-1046
    • Zheng, H.1    Zhu, Z.2
  • 13
    • 33846204280 scopus 로고    scopus 로고
    • A O.i-/.lm 1.8-v 256-mb phase-change random access memory (pram) with 66-mhz synchronous burstread operation
    • Jan
    • S. Kang, W. Y. Cho, and etc, "A O.I-/.Lm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous BurstRead Operation," Solid-State Circuits, IEEE Journal of, vol. 42, no. I , pp. 210-218, Jan. 2007.
    • (2007) Solid-State Circuits, IEEE Journal of , vol.42 , Issue.1 , pp. 210-218
    • Kang, S.1    Cho, W.Y.2
  • 15
    • 85008054314 scopus 로고    scopus 로고
    • A 90 nm 1. 8 v 512 Mb Diode-Switch PRAM with 266 MB/s Read Throughput
    • Jan
    • K-J. Lee, B.-H. Cho, and etc, "A 90 nm 1. 8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput," Solid-State Circuits, IEEE Journal of, vol. 43, no. I , pp. 150-162, Jan. 2008.
    • (2008) Solid-State Circuits, IEEE Journal of , vol.43 , Issue.1 , pp. 150-162
    • Lee, K.-J.1    Cho, B.-H.2
  • 16
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    • Power7: Ibm's next-generation server processor
    • Mar
    • R. Kalla, B. Sinharoy, W. J. Starke, and M. Floyd, "Power7: IBM's Next-Generation Server Processor," IEEE Micro, vol. 30, no. 2, pp. 7-15, Mar. 2010.
    • (2010) IEEE Micro , vol.30 , Issue.2 , pp. 7-15
    • Kalla, R.1    Sinharoy, B.2    Starke, W.J.3    Floyd, M.4
  • 20
    • 31344479086 scopus 로고    scopus 로고
    • Enhanced write performance of a 64-mb phase-change random access memory
    • Jan
    • H.-R. Oh, B.-H. Cho, W. Y. Cho, and etc, "Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory," Solid-State Circuits, IEEE Journal of, vol. 41, no. 1, pp. 122-126, Jan. 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.