Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling

Proceedings of the Annual International Symposium on Microarchitecture, MICRO

Volumn , Issue , 2009, Pages 14-23

  Qureshi, Moinuddin K ^a   Karidis, John ^a   Franceschini, Michele ^a   Srinivasan, Vijayalakshmi ^a   Lastras, Luis ^a   Abali, Bulent ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Endurance; Phase change memory; Wear leveling

Indexed keywords

ADDRESS SPACE RANDOMIZATION; MAIN MEMORY; MALICIOUS ATTACK; MEMORY SYSTEMS; MEMORY TECHNOLOGY; NONUNIFORMITY; PCM SYSTEMS; POWER EFFICIENT; SECURITY VULNERABILITIES; STORAGE OVERHEAD; WEAR LEVELING;

DURABILITY; FLASH MEMORY; NETWORK SECURITY; PULSE CODE MODULATION;

PHASE CHANGE MEMORY;

EID: 76749167601     PISSN: 10724451     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1669112.1669117     Document Type: Conference Paper

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