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Volumn , Issue , 2009, Pages 347-357

Flip-N-write: A simple deterministic technique to improve PRAM write performance, energy and endurance

Author keywords

Memory write performance; Phase change memory

Indexed keywords

DETERMINISTIC TECHNIQUE; LOW-POWER OPERATION; NONVOLATILITY; PHASE-CHANGE RANDOM ACCESS MEMORY; POWER CONSTRAINTS; PRODUCTION LEVEL; PROGRAMMABILITY; SINGLE-BIT; VALUE OF IT; WRITE OPERATIONS;

EID: 76749099329     PISSN: 10724451     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1669112.1669157     Document Type: Conference Paper
Times cited : (518)

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  • 5
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    • S. Hanzawa et al. "A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100ìA Cell Write Current," Proc. IEEE Int'l Solid-State Circuits Conf. (ISSCC), February 2007.
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    • Hanzawa, S.1
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    • A Low Power Phase-Change Random Access Memory using a Data-Comparison Write Scheme
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.