Improved iron gettering of contaminated multicrystalline silicon by high-temperature phosphorus diffusion

Journal of Applied Physics

Volumn 113, Issue 21, 2013, Pages

  Fenning, D P ^a   Zuschlag, A S ^b   Bertoni, M I ^a,d   Lai, B ^c   Hahn, G ^b   Buonassisi, T ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF KONSTANZ   (Germany)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLETE DISSOLUTION; EMITTER SHEET RESISTANCE; IRON CONCENTRATIONS; METAL CONCENTRATIONS; MICRO X-RAY FLUORESCENCE; MINORITY CARRIER LIFETIMES; MULTI-CRYSTALLINE SILICON; PHOSPHORUS DIFFUSION;

COPPER; DIFFUSION; GRAIN BOUNDARIES; INGOTS; PHOSPHORUS; PRECIPITATES; SILICIDES; SILICON WAFERS;

IRON;

EID: 84879351122     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808310     Document Type: Article

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