Understanding the distribution of iron in multicrystalline silicon after emitter formation: Theoretical model and experiments

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Schon J ^a,b   Habenicht, H ^a   Schubert, M C ^a   Warta, W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GETTERING; INTERNAL GETTERING; INTERSTITIAL IRON; IRON DISTRIBUTION; LOW TEMPERATURES; MULTI-CRYSTALLINE SILICON; PHOSPHORUS DIFFUSION; PHYSICAL MODELING; SPATIALLY RESOLVED; THEORETICAL MODELS;

CARRIER CONCENTRATION; CARRIER LIFETIME; MODELS; PHOSPHORUS; POLYSILICON; SILICON WAFERS;

DIFFUSION;

EID: 79953660454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3553858     Document Type: Article

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