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Applied Physics Letters

Volumn 93, Issue 15, 2008, Pages

Internal gettering of iron in multicrystalline silicon at low temperature

(3) Krain, Rafael a Herlufsen, Sandra a Schmidt, Jan a

a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CRYSTALLOGRAPHIC DEFECTS; INTERNAL GETTERING; INTERSTITIAL IRONS; IRON CONCENTRATIONS; LOW TEMPERATURES; MULTICRYSTALLINE SILICON WAFERS; MULTICRYSTALLINE SILICONS; RECOMBINATION LIFETIMES; VERY LOW TEMPERATURES;

SILICON WAFERS;

EID: 54149112791 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2987521 Document Type: Article

Times cited : (59)

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