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Volumn , Issue , 2002, Pages 214-217

Rapid thermal processing: A comprehensive classification of silicon materials

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; SOLAR CELLS; TEMPERATURE;

EID: 0036953873     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (9)
  • 2
    • 3142750936 scopus 로고    scopus 로고
    • High productivity methods of preparation of EFG ribbon silicon wafers
    • J. P. Kalejs, W. Schmidt, High productivity methods of preparation of EFG ribbon silicon wafers, Proc 2nd WC PVSEC, Vienna 1998, 1822.
    • Proc 2nd WC PVSEC, Vienna 1998 , pp. 1822
    • Kalejs, J.P.1    Schmidt, W.2
  • 5
    • 0035507264 scopus 로고    scopus 로고
    • Improvement of charge minority-carrier lifetime of p(boron)-type Czochralski silicon by rapid thermal annealing
    • J. Y. Lee, S. Peters, S. Rein, S. W. Glunz, Improvement of charge minority-carrier lifetime of p(boron)-type Czochralski silicon by Rapid Thermal Annealing, Prog. Photovolt: Res. Appl. 9 (2001), 417.
    • (2001) Prog. Photovolt: Res. Appl. , vol.9 , pp. 417
    • Lee, J.Y.1    Peters, S.2    Rein, S.3    Glunz, S.W.4
  • 9
    • 0000219698 scopus 로고    scopus 로고
    • Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon
    • J.-W. Jeong, M. D. Rosenblum, J. P. Kalejs, A. Rohatgi, Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon, J. Appl. Phys. 87 (2000), 7551.
    • (2000) J. Appl. Phys. , vol.87 , pp. 7551
    • Jeong, J.-W.1    Rosenblum, M.D.2    Kalejs, J.P.3    Rohatgi, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.