High concentration in-diffusion of phosphorus in Si from a spray-on source

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Bentzen, A ^a   Holt, A ^a   Christensen, J S ^b   Svensson, B G ^b  

^a INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH FROM MELT; DIFFUSION; ELECTROCHEMISTRY; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SILICON; SOLAR CELLS;

BOLTZMANN-MATANO ANALYSIS; CONCENTRATION IN-DIFFUSION; PHOSPHORUS DIFFUSED EMITTERS; SI SELF-INTERSTITIALS;

PHOSPHORUS;

EID: 33645670584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179197     Document Type: Article

References (29)

1. M. C. Duffy, F. Barson, J. M. Fairfield, and G. H. Schwuttke, J. Electrochem. Soc. 115, 1290 (1968).
2. D. B. Lee and A. F. W. Willoughby, J. Appl. Phys. 43, 245 (1972).
3. E. Tannenbaum, Solid-State Electron. 2, 123 (1961).
4. J. C. C. Tsai, Proc. IEEE 57, 1499 (1969).
5. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999).
6. J. S. Christensen, H. H. Radamson, A. Yu. Kuznetsov, and B. G. Svensson, Appl. Phys. Lett. 82, 2254 (2003).
7. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
8. R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. 124, 1107 (1977).
9. A. Bentzen, B. G. Svensson, and A. Holt, in Technical Digest of the 14th International Photovoltaic Science and Engineering Conference (PVSEC-14, Bangkok, 2004), p. 405.
10. G. Masetti, D. Nobili, and S. Solmi, in Semiconductor Si 1977, edited by, H. R. Huff, and, E. Sirtl, (The Electrochemical Society, Pennington, 1977), p. 648.
11. S. Solmi, A. Parisini, R. Angelucci, A. Armigliato, D. Nobili, and L. Moro, Phys. Rev. B 53, 7836 (1996).
12. M. E. Glicksman, Diffusion in Solids (Wiley, New York, 2000), p. 177.
13. M. Yoshida, E. Arai, H. Nakamura, and Y. Terunuma, J. Appl. Phys. 45, 1498 (1974).
14. J. A. Van Vechten, in Handbook on Semiconductors, edited by, T. S. Moss, (North-Holland, Amsterdam, 1980), Vol. 3, p. 1.
15. J. L. Newton, A. P. Chatterjee, R. D. Harris, and G. D. Watkins, Physica B & C 116, 219 (1983).
16. M. A. Green, J. Appl. Phys. 67, 2944 (1990).
17. F. A. Kroger, J. Electrochem. Soc. 125, 998 (1978).
18. W. Shockley and J. T. Last, Phys. Rev. 107, 392 (1957).
19. D. Mathiot and J. C. Pfister, J. Appl. Phys. 55, 3518 (1984).
20. M. Uematsu, J. Appl. Phys. 82, 2228 (1997).
21. F. C. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956).
22. P. Fahey, R. W. Dutton, and S. M. Hu, Appl. Phys. Lett. 44, 777 (1984).
23. S. M. Hu, J. Appl. Phys. 57, 1069 (1985).
24. S. Yu, T. Y. Yan, and U. Gösele, J. Appl. Phys. 70, 4827 (1991).
25. S. M. Hu, P. Fahey, and R. W. Dutton, J. Appl. Phys. 54, 6912 (1983).
26. C. D. Thurmond, J. Electrochem. Soc. 122, 1133 (1975).
27. R. B. Fair and G. R. Weber, J. Appl. Phys. 44, 273 (1973).
28. S. Solmi and D. Nobili, J. Appl. Phys. 83, 2484 (1998).
29. FEMLAB (Comsol, Inc., 1100 Glendon Avenue, LA).