Detailed investigation of surface passivation methods for lifetime measurements on P-type silicon wafers

IEEE Journal of Photovoltaics

Volumn 2, Issue 1, 2012, Pages 1-6

  Pollock, Kevin L ^a   Junge, Johannes ^b   Hahn, Giso ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Photoconductance; silicon wafers; surface passivation

Indexed keywords

AMORPHOUS SILICON (A-SI); BULK LIFETIME; DIELECTRIC PASSIVATION; EDGE-DEFINED FILM-FED GROWTH; INTERNAL GETTERING; LIFETIME MEASUREMENTS; MONOCRYSTALLINE; MULTICRYSTALLINE; P-TYPE SILICON WAFERS; PASSIVATING LAYER; PHOTOCONDUCTANCE; PHOTOLUMINESCENCE IMAGING; SURFACE ETCHING; SURFACE PASSIVATION; TEMPORAL STABILITY; TIME-PERIODS;

ALUMINUM; ANNEALING; DEGRADATION; ETHANOL; FILM GROWTH; IODINE; METHANOL; PASSIVATION; SILICON; SILICON NITRIDE;

SILICON WAFERS;

EID: 84865195858     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2174337     Document Type: Article

References (13)

1. B. Hoex, J. Schmidt, P. Pohl, M. C. M. van de Sanden, and W. M. M. Kessels, "Silicon surface passivation by atomic layer deposited Al2O3, " J. Appl. Phys., vol. 104, pp. 044903-1-044903-12, 2008.
2. A. Aberle, "Overview on SiN surface passivation of crystalline silicon solar cells," Solar Energy Mater. Solar Cells, vol. 65, pp. 239-248, 2001.
3. H. Plagwitz, B. Terheiden, and R. Brendel, "Staebler-Wronski-like formation of defects at the amorphous-silicon-crystalline silicon interface during illumination," J. Appl. Phys., vol. 103, pp. 094506-1-094506-4, 2008.
4. T. S. Horanyi, T. Pavelka, and P. Tüttö, "In situ bulk lifetime measurement on silicon with a chemically passivated surface," Appl. Surf. Sci., vol. 63, pp. 306-311, 1993. (Pubitemid 23599868)
5. A. W. Stephens and M. A. Green, "Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurements," Solar Energy Mater. Solar Cells, vol. 45, pp. 255-265, 1997. (Pubitemid 127417396)
6. H. Takato, I. Sakata, and R. Shimokawa, "Quinhydrone/methanol treatment for the measurement of carrier lifetimes in silicon substrates," Jpn. J. Appl. Phys., vol. 41, pp. L870-L872, 2002.
7. B. Chhabra, S. Bowden, R. L. Opila, and C. B. Honsberg, "High effective minority carrier lifetime on silicon substrates using quinhydrone- methanol passivation," Appl. Phys. Lett., vol. 96, pp. 063502-1-063502-3, 2010.
8. W. Kern, "The evolution of silicon wafer cleaning technology," J. Electrochem. Soc., vol. 137, no. 6, pp. 1887-1892, 1990. (Pubitemid 20706690)
9. W.Kern and D. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology," RCA Rev., vol. 31, pp. 187- 206, 1970.
10. M. Solcansky, M. Machacek, J. Bousek, and A. Poruba, "Chemical passivation of a silicon surface for minority carrier bulk-lifetime measurements," in Proc. 24th Eur. Photovoltaic Solar Energy Conf., Hamburg, Germany, 2009, pp. 1669-1672.
11. T. Trupke, R. A. Bardos, M. C. Schubert, and W. Warta, "Photoluminescence imaging of silicon wafers," Appl. Phys. Lett., vol. 89, pp. 044107- 1-044107-3, 2006.
12. R. Krain, S. Herlufsen, and J. Schmidt, "Internal gettering of iron in multicrystalline silicon at low temperature," Appl. Phys. Lett., vol. 93, no. 15, pp. 152108-1-152108-3, 2008.
13. H. Habenicht, M. C. Schubert, A. Richter, and W. Warta, "Impact of SiNx :H and Al2O3 surface passivation on interstitial iron concentration and carrier lifetime in mc-silicon wafers," in Proc. 24th Eur. Photovoltaic Solar Energy Conf., Hamburg, Germany, 2009, pp. 2266-2269.