Research on efficiency limiting defects and defect engineering in silicon solar cells - results of the German research cluster SolarFocus

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 733-738

  Riepe, Stephan ^a,b   Reis, Isolde E ^a,b   Kwapil, Wolfram ^b   Falkenberg, Marie Aylin ^c   Schön, Jonas ^b   Behnken, Herfried ^d   Bauer, Jan ^e   Kreßner Kiel, Denise ^f   Seifert, Winfried ^g   Koch, Wolfgang ^h  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

^d ACCESS E V   (Germany)

^e MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^f TU BERGAKADEMIE FREIBERG   (Germany)

^g BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^h KoSolCo ^*  (Germany)

Author keywords

Defects; Silicon; Solar cells; Transition metals

Indexed keywords

ACTIVE DEFECTS; ALL METAL; AS DOPING; COMBINED ANALYSIS; DEFECT ENGINEERING; FEEDSTOCK MATERIALS; FTIR ANALYSIS; GE CONTENT; IMPURITY CONTENT; LIFETIME MEASUREMENTS; MATERIAL RESEARCH; METAL CONTAMINATION; METAL IMPURITIES; MULTI-CRYSTALLINE SILICON; NITRIDE FORMATION; PHOTOVOLTAIC APPLICATIONS; POSITIVE EFFECTS; PRECIPITATION BEHAVIOUR; SOLAR CELL EFFICIENCIES; SOLAR CELL PARAMETERS; SOLAR CELL PROCESSING; TRANSITION METAL IMPURITIES;

CHROMIUM; DEFECTS; FEEDSTOCKS; GERMANIUM; IMPURITIES; INGOTS; POLYSILICON; RESEARCH; SILICON CARBIDE; SILICON NITRIDE; SOLAR CELLS; TRANSITION METALS;

SOLAR POWER GENERATION;

EID: 79952730795     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000338     Document Type: Article

References (18)

1. G. Coletti, P.C.P. Bronsveld, C. Knopf, C.C. Swanson, R. Kvande, L. Arnberg, H. Habenicht, and W. Warta, in: Proceedings 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany (2009), pp. 1011-1014.
2. J. Chen, D. Yang, X. Ma, D. Que, Mater. Sci. Eng. B 159/160, 235-238 (2009).
3. P. Raue, A. Lawerenz, L. Long, M. Rinio, E. Buhrig, and H.J. Möller, in: Proceedings 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 1997, pp. 1791-1794.
4. S. Pizzini, Appl. Phys. A 96, 171-188 (2009).
5. J. Libal, S. Novaglia, M. Acciarri, S. Binetti, R. Petres, J. Arumughan, R. Kopecek, and A. Prokopenko, J. Appl. Phys. 104, 104507 (2008).
6. S. Riepe, I.E. Reis, and W. Koch, in: Proceedings 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2008, pp. 1410-1413.
7. I.E. Reis, S. Riepe, W. Koch, J. Bauer, S. Beljakowa, O. Breitenstein, H. Habenicht, D. Kreßner-Kiel, G. Pensl, J. Schön, and W. Seifert, in: Proceedings 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany 2009, pp. 2144-2148.
8. J. Schön, H. Habenicht, M.C. Schubert, and W. Warta, Solid State Phenom. 156-58, 223-228 (2010).
9. E. Scheil, Z. Metallkd. 34, 70-72 (1942).
10. E. Olsen and E. J. Øvrelid, Prog. Photovolt.: Res. Appl. 16, 93-100 (2008).
11. J. R. Davis et al., IEEE Trans. Electron Devices 27, 677 (1980).
12. H. Lemke, in: Semiconductor Silicon, edited by H. R. Huff et al. (The Electrochemical Society, New Jersey, USA, 1994), p. 695.
13. D. Macdonald et al., J. Appl. Phys. 97, 33523-1-7 (2005).
14. K. Graff, Metal Impurities in Silicon-Device Fabrication. 2nd ed., Springer Ser. Mater. Sci., Vol. 24, edited by R. Hull et al. (Springer, Berlin, 1999), p. 28.
15. W. Kwapil et al., Appl. Phys. Lett. 95, 232113 (2009).
16. A. Rohatgi et al., Solid-State Electron. 23, 415-422 (1980)
17. T. Buonassisi et al., Acta Materialia 55, 6119-6126 (2007).
18. O. Breitenstein, J. Bauer, and J.P. Rakotoniaina, Semiconductors 41, 440-443 (2007) (ISSN 1063-7826).