Towards the tailoring of P diffusion gettering to as-grown silicon material properties

Solid State Phenomena

Volumn 178-179, Issue , 2011, Pages 158-165

  Hofstetter, Jasmin ^a   Lelièvre, Jean François ^b   Fenning, David P ^c   Bertoni, Mariana I ^c   Buonassisi, Tonio ^c   Del Cañizo, Carlos ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b Centro de Tecnología Del Silicio Solar CENTESIL   (Spain)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Defect engineering; Extended gettering; Iron; Multi crystalline silicon; Phosphorous diffusion

Indexed keywords

CONCENTRATION (PROCESS); DEFECTS; DIFFUSION; IRON; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; CELL ENGINEERING; SILICON SOLAR CELLS;

AS-GROWN; CELL PROCESS; DEFECT ENGINEERING; ELECTRON LIFETIME; EXTENDED GETTERING; GETTERING; MULTI-CRYSTALLINE SILICON; P-DIFFUSION; PHOSPHOROUS DIFFUSION; PROCESS NEEDS; SEGREGATION GETTERING; SILICON MATERIALS; SOLAR CELL PROCESSING;

SILICON WAFERS;

EID: 80053275995     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.178-179.158     Document Type: Conference Paper

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