Origin of the low carrier lifetime edge zone in multicrystalline PV silicon

Progress in Photovoltaics: Research and Applications

Volumn 17, Issue 5, 2009, Pages 289-296

  Nærland, Tine Uberg ^a   Arnberg, Lars ^a   Holt, Arve ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

Author keywords

Defects; Edge zone; Impurities; Interstitial iron; Minority charge carrier lifetime; Multicrystalline silicon

Indexed keywords

CHARACTERIZATION METHODS; CRUCIBLE WALL; DIRECTIONALLY SOLIDIFIED; DISLOCATION DENSITIES; DOPED SILICON; EDGE ZONE; FTIR; HIGH ANGLE BOUNDARIES; HIGH CONCENTRATION; INTERNAL GETTERING; INTERSTITIAL IRON; LIFETIME DEGRADATION; LIGHT ELEMENTS; MINORITY CARRIER LIFETIMES; MINORITY CHARGE CARRIER LIFETIME; MULTICRYSTALLINE; MULTICRYSTALLINE SILICON; SOLID-STATE DIFFUSION; TOTAL IRONS;

CHEMICAL ELEMENTS; CHROMIUM; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; DEFECTS; DIFFUSION COATINGS; DISLOCATIONS (CRYSTALS); FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROCRYSTALLINE SILICON; OPTICAL MICROSCOPY; PHOSPHORUS; POLYSILICON; TITANIUM;

CARRIER LIFETIME;

EID: 67650149312     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.876     Document Type: Article

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