Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 10, 2012, Pages 1861-1865

  Hofstetter, Jasmin ^a   Fenning, David P ^a   Lelièvre, Jean François ^b   Del Cañizo, Carlos ^c   Buonassisi, Tonio ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c Centro de Tecnología Del Silicio Solar CENTESIL   (Spain)

Author keywords

defect engineering; gettering; silicon solar cells; simulation

Indexed keywords

ANNEALING TREATMENTS; AS-GROWN; DEFECT ENGINEERING; GETTERING; HIGH DENSITY; HIGH-EFFICIENCY SOLAR CELLS; INTERSTITIAL IRON; LOWER DENSITY; METAL CONCENTRATIONS; METAL IMPURITIES; METAL PRECIPITATES; METAL SILICIDE; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SI; PHOSPHORUS DIFFUSION; PRECIPITATE SIZE; PROCESS STEPS; SIMULATION;

METALS; PHOSPHORUS; POLYSILICON; PRECIPITATES; SILICIDES; SILICON SOLAR CELLS; SIZE DISTRIBUTION;

SILICON WAFERS;

EID: 84867487598     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200360     Document Type: Article

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