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Volumn 55, Issue 18, 2007, Pages 6119-6126

Transition metal co-precipitation mechanisms in silicon

Author keywords

Defect engineering; Intermetallics; Multicrystalline silicon; Photovoltaics; Precipitation

Indexed keywords

ANNEALING; COPRECIPITATION; MORPHOLOGY; PHASE DIAGRAMS; PHOTOVOLTAIC CELLS; SILICIDES; SYNCHROTRONS;

EID: 35148866702     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2007.07.030     Document Type: Article
Times cited : (54)

References (55)
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    • Setton M. Ternary TM-TM-Si reactions. In: Maex K, van Rossum M, editors. Properties of Metal Silicides. London, UK: INSPEC; 1995. p. 129. ISBN 0-85296-859-0.
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    • Istratov AA, Buonassisi T, Marcus MA, Ciszek TF, Weber ER. In: Proceedings of the 14th NREL workshop on crystalline silicon solar cell materials and processes, Winter Park, USA; 2004. p. 165.
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    • Buonassisi T, Istratov AA, Marcus MA, Peters S, Ballif C, Heuer M, et al. In: Proceedings of the 31st IEEE photovoltaic specialists conference, Lake Buena Vista, USA; 2005. p. 1027.
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    • Good EA. Impurity partitioning effects in silicon crystallization from metal: eutectic solutions for solar cell applications. Ph.D. dissertation, Colorado School of Mines, Golden, USA; 2004.
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    • Li J, Yang W-S, Tan TY, Chevacharoenkul S, Chapman R. Formation of a liquid metallic phase on silicon wafer surfaces during high temperature annealing. In: Bullis WM, Gosele U, Shimura F, editors. Defects in silicon II. Electrochemical Society; 1991. p. 651.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.