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Volumn 90, Issue 7-8, 2006, Pages 998-1012

Improved phosphorous gettering of multicrystalline silicon

Author keywords

Defects; Gettering; Iron; Lifetime; Silicon

Indexed keywords

DIFFUSION; GRAIN BOUNDARIES; PHOSPHORUS; PRECIPITATION (CHEMICAL); SILICON; THERMODYNAMICS;

EID: 33344457068     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2005.05.015     Document Type: Article
Times cited : (62)

References (28)
  • 9
    • 33344460233 scopus 로고    scopus 로고
    • Defects in the deteriorated border layer of block-cast multicrystalline silicon ingots
    • Preprint
    • M. Rinio, C. Ballif, T. Buonassisi, D. Borchert, Defects in the deteriorated border layer of block-cast multicrystalline silicon ingots. Preprint 18th EPVSEC Paris, 2004.
    • (2004) 18th EPVSEC Paris
    • Rinio, M.1    Ballif, C.2    Buonassisi, T.3    Borchert, D.4
  • 10
    • 33344462080 scopus 로고    scopus 로고
    • Phosphorus diffusion and gettering in multi-crystalline silicon solar cell processing
    • preprint
    • A. Bentzen, E. S. Marstein, R. Kopecek, A. Holt, Phosphorus diffusion and gettering in multi-crystalline silicon solar cell processing, preprint 18th EPVSEC Paris, 2004.
    • (2004) 18th EPVSEC Paris
    • Bentzen, A.1    Marstein, E.S.2    Kopecek, R.3    Holt, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.