Nickel: A very fast diffuser in silicon

Journal of Applied Physics

Volumn 113, Issue 20, 2013, Pages

  Lindroos, J ^a,e   Fenning, D P ^b   Backlund, D J ^c   Verlage, E ^b,f   Gorgulla, A ^d   Estreicher, S K ^c   Savin, H ^a   Buonassisi, T ^b  

^a AALTO UNIVERSITY   (Finland)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c TEXAS TECH UNIVERSITY   (United States)

^d UNIVERSITY OF KONSTANZ   (Germany)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; SILICON;

EXPERIMENTAL METHODS; FIRST-PRINCIPLES THEORY; NUDGED ELASTIC BAND METHODS; ORDERS OF MAGNITUDE; PHOTOVOLTAIC DEVICES;

NICKEL;

EID: 84879117722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807799     Document Type: Article

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