A quantitative method of metal impurities depth profiling for gettering evaluation in silicon wafers

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 81-90

  Shabani, M B ^a   Yoshimi, T ^b   Okuuchi, S ^a   Abe, H ^b  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

AAS; Bulk Decomposition; Depth Profiling; Drop Etching; Drop Sandwich Etching; External Gettering; Gettering Evaluation; Internal Gettering; SIMOX

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC ABSORPTION SPECTROMETRY; DEPTH PROFILING; DROPS; ETCHING; IRON; SEMICONDUCTOR DEVICE MANUFACTURE; ANNEALING; ATOMIC SPECTROSCOPY; DECOMPOSITION; DISSOLUTION; VACUUM APPLICATIONS;

ATOMIC ABSORPTION SPECTROSCOPY; GETTERING; INTENTIONAL CONTAMINATIONS; INTERNAL GETTERING; QUANTITATIVE METHOD; SAMPLE PREPARATION; SIMOX; WET CHEMICAL PREPARATION;

SILICON WAFERS;

DEPTH PROFILING; DROP ETCHING; DROP SANDWICH ETCHING (DSE); GETTERING; GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROSCOPY (GF AAS);

EID: 4244192410     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.81     Document Type: Article

References (23)

1. J. Partanen, T. Tumi, M. Tilli, S. Hahn, C-C.D. Wong, and F.A. Ponce, J. Mater. Res., 4, 623 (1989).
2. R. B. M. Girisch, in Crystalline Defect and contamination, B. O. Kolbesen, P. Stallhofer, C. Claeys, and F. Tardif, Editors, PV 93-15, p. 170, The Electrochemical society softbound proceedings, Series., Pennington, NJ (1993).
3. D. M. LEE, K. Mishra, W, Huber, S. Chevacharoenkul, S. p. Choi, and I. H. Doh, in semiconductor Silicon H. R. Huff, W. Bergholz, K. Sumino, Editors, PV 94-10, p. 820, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
4. M. Sano, S. Sumita, T. Shigematsu, and N. Fujino, ibid., PV 94-10, p. 784 (1994).
5. M. Sano, M. Hourai, M. Miyazaki, N. Fujino, and T. Shiraiwa, Jnp. J. Appl. Phys. 27, 3580 (1988).
6. D. Gilles, E. R. Weberand S. Hahn, Phys. Rev. Lett. 64, 196 (1990).
7. E. G. Colas and E. R Weber, Appl. Phys. Lett. 48, 1371 (1986).
8. W. Schroter and R. Kuhnapfel, Appl. Phys. Lett. 56, 2207 (1990).
9. A. Ourmazd and W. Schroter, Appl. Phys. Lett. 45, 781 (1984).
10. J. S. Kang and K. Schroder, J. Appl. Phys. 65, 2974 (1989).
11. M. Aoki, A. Hara, and A. Ohsawa, J. Appl. Phys. 72, 895 (1992).
12. M. B. Shabani, H. Suga, M. Fukuda, K. Miyamoto and Y. Sayama, Abstract 1D06, p. 229, 54 meeting of the Japan Society of Analytical Chemistry,Gunma (1993).
13. M. B. Shabani, T. Yoshimi, H. Abe, M. Fukuda, and Y. Sayama, Abstract 396, p. 608, The Electrochemical Society, Vol. 94-2, Florida, (1994).
14. M. B. Shabani, T, Yoshimi, H. Abe, M. Fukuda, and Y. Sayama, Abstract 2H09, p. 405, 44 meeting of The Japan Society of Analytical Chemistry, Hokkaido (1995).
15. [[15] B. Hackl, K. J. Range, P. Stallhofer and L. Fabry, J. Electrochem. Soc., 139, 1495 (1992).
16. G. Zoth and W. Bergholz, J. Appl. Phys. 67, 6764 (1990).
17. H. Yamanaka, H. Kaneko, Y. Haruta and Y. Iwamoto, Jpn. J. Appl. Phys. 32, L738 (1993).
18. E. R. Weber, Appl. Phys. A 30, 1 (1983).
19. M. B. Shabani, T. Yoshimi, H. Abe, T. Nakai and B. Cordts, Silicon-on-Insulator Technology and Devices VII, P. L. F. Hemment, S. Cristoloveanu, K. Izumi, T. Houston and S. Wilson, Editors,PV96-3, p. 162, The Electrochemical Society Proceeding Series., Pennington, NJ (1996).
20. M. B. Shabani, T. Yoshimi, S. Okuuchi and H. Abe, Extended Abstract (The 57th Autumn Meeting, 1996); The Japan Society of Applied Physics No. 1, 7p-ZG-11, 167 (1996).
21. M. Kimura, H. Shinyashiki, S. Okuuchi, T. Yoshimi, M. B. Shabani, and Y. Shimanuki, ibid, No, 1, 7p-ZG-10, 166 (1996).
22. M. Aoki, T. Itakura, and N. Sasaki, Appl. Phys. Lett. 66, 2709 (1995).
23. D. Gilles, W. Schroter, and W. Bergholz, Phys. Rev. B 41, 5770 (1990).