SCOPUS 정보 검색 플랫폼

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

Ti, Fe, and Ni in Si and their interactions with the vacancy and the A center: A theoretical study

(2) Backlund, D J a Estreicher, S K a

a TEXAS TECH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956320645 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.235213 Document Type: Article

Times cited : (46)

References (88)

1
- 0000820478
- 10.1063/1.1722310
- J. D. Struthers, J. Appl. Phys. 27, 1560 (1956). 10.1063/1.1722310
- (1956) J. Appl. Phys. , vol.27 , pp. 1560
- Struthers, J.D.¹

2
- 4243219433
- 10.1103/PhysRev.108.1409
- C. B. Collins and R. O. Carlson, Phys. Rev. 108, 1409 (1957). 10.1103/PhysRev.108.1409
- (1957) Phys. Rev. , vol.108 , pp. 1409
- Collins, C.B.¹ Carlson, R.O.²

3
- 0020543433
- 10.1007/BF00617708
- E. R. Weber, Appl. Phys. A: Solids Surf. 30, 1 (1983). 10.1007/BF00617708
- (1983) Appl. Phys. A: Solids Surf. , vol.30 , pp. 1
- Weber, E.R.¹

4
- 0031998838
- 10.1007/s003390050649
- A. A. Istratov and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. 66, 123 (1998). 10.1007/s003390050649
- (1998) Appl. Phys. A: Mater. Sci. Process. , vol.66 , pp. 123
- Istratov, A.A.¹ Weber, E.R.²

5
- 0032652904
- 10.1007/s003390050968
- A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. 69, 13 (1999). 10.1007/s003390050968
- (1999) Appl. Phys. A: Mater. Sci. Process. , vol.69 , pp. 13
- Istratov, A.A.¹ Hieslmair, H.² Weber, E.R.³

6
- 0034187515
- 10.1007/s003390051074
- A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. 70, 489 (2000). 10.1007/s003390051074
- (2000) Appl. Phys. A: Mater. Sci. Process. , vol.70 , pp. 489
- Istratov, A.A.¹ Hieslmair, H.² Weber, E.R.³

7
- 77956321243
- in edited by B. L. Sopori (NREL, Golden, CO
- A. A. Istratov, T. Buonassisi, M. Heuer, M. Pickett, and E. R. Weber, in Proceedings of the 15th Workshop on c-Si Solar Cells and Modules: Materials and Processes, edited by, B. L. Sopori, (NREL, Golden, CO, 2005), pp. 70-77.
- (2005) Proceedings of the 15th Workshop on C-Si Solar Cells and Modules: Materials and Processes , pp. 70-77
- Istratov, A.A.¹ Buonassisi, T.² Heuer, M.³ Pickett, M.⁴ Weber, E.R.⁵

8
- 0000270087
- 10.1016/0038-1101(80)90076-3
- A. Rohatgi, J. R. Davis, R. H. Hopkins, P. Rai-Choudhury, P. G. McMullin, and J. R. McCormick, Solid-State Electron. 23, 415 (1980). 10.1016/0038- 1101(80)90076-3
- (1980) Solid-State Electron. , vol.23 , pp. 415
- Rohatgi, A.¹ Davis, J.R.² Hopkins, R.H.³ Rai-Choudhury, P.⁴ McMullin, P.G.⁵ McCormick, J.R.⁶

9
- 0040250646
- 10.1063/1.108603
- J. T. Borenstein, J. I. Hanoka, B. R. Bathey, J. P. Kalejs, and S. Mil'shtein, Appl. Phys. Lett. 62, 1615 (1993). 10.1063/1.108603
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1615
- Borenstein, J.T.¹ Hanoka, J.I.² Bathey, B.R.³ Kalejs, J.P.⁴ Mil'Shtein, S.⁵

10
- 0019008113
- 10.1109/T-ED.1980.19922
- R. Davis, Jr., A. Rohatgi, R. H. Hopkins, P. D. Blais, P. Rai-Choudhury, J. R. McCormick, and H. C. Mollenkopf, IEEE Trans. Electron Devices 27, 677 (1980). 10.1109/T-ED.1980.19922
- (1980) IEEE Trans. Electron Devices , vol.27 , pp. 677
- Davis, Jr.R.¹ Rohatgi, A.² Hopkins, R.H.³ Blais, P.D.⁴ Rai-Choudhury, P.⁵ McCormick, J.R.⁶ Mollenkopf, H.C.⁷

11
- 0001078948
- 10.1103/PhysRev.117.102
- H. H. Woodbury and G. W. Ludwig, Phys. Rev. 117, 102 (1960). 10.1103/PhysRev.117.102
- (1960) Phys. Rev. , vol.117 , pp. 102
- Woodbury, H.H.¹ Ludwig, G.W.²

12
- 3943072415
- 10.1103/PhysRevLett.5.98
- G. W. Ludwig and H. H. Woodbury, Phys. Rev. Lett. 5, 98 (1960). 10.1103/PhysRevLett.5.98
- (1960) Phys. Rev. Lett. , vol.5 , pp. 98
- Ludwig, G.W.¹ Woodbury, H.H.²

13
- 77956934208
- G. W. Ludwig and H. H. Woodbury, Solid State Phys. 13, 223 (1962).
- (1962) Solid State Phys. , vol.13 , pp. 223
- Ludwig, G.W.¹ Woodbury, H.H.²

14
- 0011290489
- 10.1103/PhysRevB.15.834
- L. A. Hemstreet, Phys. Rev. B 15, 834 (1977). 10.1103/PhysRevB.15.834
- (1977) Phys. Rev. B , vol.15 , pp. 834
- Hemstreet, L.A.¹

15
- 0000651280
- 10.1103/PhysRevB.23.1851;
- G. G. DeLeo, G. D. Watkins, and W. B. Fowler, Phys. Rev. B 23, 1851 (1981) 10.1103/PhysRevB.23.1851
- (1981) Phys. Rev. B , vol.23 , pp. 1851
- Deleo, G.G.¹ Watkins, G.D.² Fowler, W.B.³

16
- 23544445453
- 10.1103/PhysRevB.25.4962;
- G. G. DeLeo, G. D. Watkins, and W. B. Fowler, Phys. Rev. B 25, 4962 (1982) 10.1103/PhysRevB.25.4962
- (1982) Phys. Rev. B , vol.25 , pp. 4962
- Deleo, G.G.¹ Watkins, G.D.² Fowler, W.B.³

17
- 4243592815
- 10.1103/PhysRevB.25.4972
- G. G. DeLeo, G. D. Watkins, and W. B. Fowler, Phys. Rev. B 25, 4972 (1982). 10.1103/PhysRevB.25.4972
- (1982) Phys. Rev. B , vol.25 , pp. 4972
- Deleo, G.G.¹ Watkins, G.D.² Fowler, W.B.³

18
- 0000366203
- 10.1103/PhysRevB.26.5989
- A. Zunger and U. Lindefelt, Phys. Rev. B 26, 5989 (1982). 10.1103/PhysRevB.26.5989
- (1982) Phys. Rev. B , vol.26 , pp. 5989
- Zunger, A.¹ Lindefelt, U.²

19
- 0001215687
- 10.1103/PhysRevB.27.1191
- A. Zunger and U. Lindefelt, Phys. Rev. B 27, 1191 (1983). 10.1103/PhysRevB.27.1191
- (1983) Phys. Rev. B , vol.27 , pp. 1191
- Zunger, A.¹ Lindefelt, U.²

20
- 0012825801
- 10.1103/PhysRevB.31.8317
- H. Katayama-Yoshida and A. Zunger, Phys. Rev. B 31, 8317 (1985). 10.1103/PhysRevB.31.8317
- (1985) Phys. Rev. B , vol.31 , pp. 8317
- Katayama-Yoshida, H.¹ Zunger, A.²

21
- 4243661744
- 10.1103/PhysRevLett.55.1498
- F. Beeler, O. K. Andersen, and M. Scheffler, Phys. Rev. Lett. 55, 1498 (1985). 10.1103/PhysRevLett.55.1498
- (1985) Phys. Rev. Lett. , vol.55 , pp. 1498
- Beeler, F.¹ Andersen, O.K.² Scheffler, M.³

22
- 36549096106
- 10.1063/1.343349
- J. Utzig, J. Appl. Phys. 65, 3868 (1989). 10.1063/1.343349
- (1989) J. Appl. Phys. , vol.65 , pp. 3868
- Utzig, J.¹

23
- 0001745555
- 10.1103/PhysRevB.45.13383
- D. E. Woon, D. S. Marynick, and S. K. Estreicher, Phys. Rev. B 45, 13383 (1992). 10.1103/PhysRevB.45.13383
- (1992) Phys. Rev. B , vol.45 , pp. 13383
- Woon, D.E.¹ Marynick, D.S.² Estreicher, S.K.³

24
- 0041849943
- 10.1063/1.100446
- S. Hocine and D. Mathiot, Appl. Phys. Lett. 53, 1269 (1988). 10.1063/1.100446
- (1988) Appl. Phys. Lett. , vol.53 , pp. 1269
- Hocine, S.¹ Mathiot, D.²

25
- 0343913988
- 10.1103/PhysRevLett.81.1243
- A. A. Istratov, C. Flink, H. Hieslmair, E. R. Weber, and T. Heiser, Phys. Rev. Lett. 81, 1243 (1998). 10.1103/PhysRevLett.81.1243
- (1998) Phys. Rev. Lett. , vol.81 , pp. 1243
- Istratov, A.A.¹ Flink, C.² Hieslmair, H.³ Weber, E.R.⁴ Heiser, T.⁵

26
- 0037462987
- 10.1103/PhysRevLett.90.035504Although this paper correctly describes the { Cui Cus } pair, it incorrectly assigns it to the " C0 u " defect, which is now known to contain four Cu atoms;
- S. K. Estreicher, D. West, J. Goss, S. Knack, and J. Weber, Phys. Rev. Lett. 90, 035504 (2003). 10.1103/PhysRevLett.90.035504
- (2003) Phys. Rev. Lett. , vol.90 , pp. 035504
- Estreicher, S.K.¹ West, D.² Goss, J.³ Knack, S.⁴ Weber, J.⁵

27
- 43049119282
- see, 10.1103/PhysRevLett.100.177402
- see M. Steger, A. Yang, N. Stavrias, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, and H.-J. Pohl, Phys. Rev. Lett. 100, 177402 (2008). 10.1103/PhysRevLett.100.177402
- (2008) Phys. Rev. Lett. , vol.100 , pp. 177402
- Steger, M.¹ Yang, A.² Stavrias, N.³ Thewalt, M.L.W.⁴ Riemann, H.⁵ Abrosimov, N.V.⁶ Churbanov, M.F.⁷ Gusev, A.V.⁸ Bulanov, A.D.⁹ Kovalev, I.D.¹⁰ Kaliteevskii, A.K.¹¹ Godisov, O.N.¹² Becker, P.¹³ Pohl, H.-J.¹⁴

28
- 0021479767
- 10.1063/1.334095
- A. C. Wang and C. T. Sah, J. Appl. Phys. 56, 1021 (1984). 10.1063/1.334095
- (1984) J. Appl. Phys. , vol.56 , pp. 1021
- Wang, A.C.¹ Sah, C.T.²

29
- 0004192386
- Springer, Berlin
- K. Graff, Metal Impurities in Silicon-Device Fabrication (Springer, Berlin, 1995).
- (1995) Metal Impurities in Silicon-Device Fabrication
- Graff, K.¹

30
- 0344552940
- 10.1143/JJAP.42.5415
- P. Kaminski, R. Kozlowski, A. Jelenski, T. Mchedlidze, and M. Suezawa, Jpn. J. Appl. Phys., Part 1 42, 5415 (2003). 10.1143/JJAP.42.5415
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 5415
- Kaminski, P.¹ Kozlowski, R.² Jelenski, A.³ McHedlidze, T.⁴ Suezawa, M.⁵

31
- 36448942413
- B. A. Komarov, Fiz. Tekh. Poluprovodn. 38, 1079 (2004)
- (2004) Fiz. Tekh. Poluprovodn. , vol.38 , pp. 1079
- Komarov, B.A.¹

32
- 6344258777
- [10.1134/1.1797482
- B. A. Komarov, [Semiconductors 38, 1041 (2004)]. 10.1134/1.1797482
- (2004) Semiconductors , vol.38 , pp. 1041
- Komarov, B.A.¹

33
- 0001888722
- 10.1103/PhysRevB.25.25
- S. H. Müller, G. M. Tuynman, E. G. Sieverts, and C. A. J. Ammerlaan, Phys. Rev. B 25, 25 (1982). 10.1103/PhysRevB.25.25
- (1982) Phys. Rev. B , vol.25 , pp. 25
- Müller, S.H.¹ Tuynman, G.M.² Sieverts, E.G.³ Ammerlaan, C.A.J.⁴

34
- 38549162637
- 10.4028/www.scientific.net/SSP.131-133.363
- V. P. Markevich, A. R. Peaker, I. F. Medvedeva, V. E. Gusakov, L. I. Murin, and B. G. Svensson, Solid State Phenom. 131-133, 363 (2008). 10.4028/www.scientific.net/SSP.131-133.363
- (2008) Solid State Phenom. , vol.131-133 , pp. 363
- Markevich, V.P.¹ Peaker, A.R.² Medvedeva, I.F.³ Gusakov, V.E.⁴ Murin, L.I.⁵ Svensson, B.G.⁶

35
- 77950678200
- 10.1149/1.3096565
- V. P. Markevich, A. R. Peaker, I. F. Medvedeva, V. E. Gusakov, L. I. Murin, and B. G. Svensson, ECS Trans. 18, 1013 (2009). 10.1149/1.3096565
- (2009) ECS Trans. , vol.18 , pp. 1013
- Markevich, V.P.¹ Peaker, A.R.² Medvedeva, I.F.³ Gusakov, V.E.⁴ Murin, L.I.⁵ Svensson, B.G.⁶

36
- 0042433715
- 10.1103/PhysRevLett.66.3028
- B. G. Svensson, M. O. Aboelfotoh, and J. L. Lindström, Phys. Rev. Lett. 66, 3028 (1991). 10.1103/PhysRevLett.66.3028
- (1991) Phys. Rev. Lett. , vol.66 , pp. 3028
- Svensson, B.G.¹ Aboelfotoh, M.O.² Lindström, J.L.³

37
- 0342608655
- 10.1103/PhysRevB.52.2522
- M. O. Aboelfotoh and B. G. Svensson, Phys. Rev. B 52, 2522 (1995). 10.1103/PhysRevB.52.2522
- (1995) Phys. Rev. B , vol.52 , pp. 2522
- Aboelfotoh, M.O.¹ Svensson, B.G.²

38
- 0012152983
- 10.1103/PhysRevB.54.R11038
- W. Jost and J. Weber, Phys. Rev. B 54, R11038 (1996). 10.1103/PhysRevB.54.R11038
- (1996) Phys. Rev. B , vol.54 , pp. 11038
- Jost, W.¹ Weber, J.²

39
- 0345072500
- 10.1016/S0921-5107(98)00280-3
- M. Shiraishi, J.-U. Sachse, H. Lemke, and J. Weber, Mater. Sci. Eng., B 58, 130 (1999). 10.1016/S0921-5107(98)00280-3
- (1999) Mater. Sci. Eng., B , vol.58 , pp. 130
- Shiraishi, M.¹ Sachse, J.-U.² Lemke, H.³ Weber, J.⁴

40
- 0029756703
- 10.1088/0268-1242/11/1/007;
- W. Jost, J. Weber, and H. Lemke, Semicond. Sci. Technol. 11, 22 (1996) 10.1088/0268-1242/11/1/007
- (1996) Semicond. Sci. Technol. , vol.11 , pp. 22
- Jost, W.¹ Weber, J.² Lemke, H.³

41
- 0030125703
- 10.1088/0268-1242/11/4/011
- W. Jost, J. Weber, and H. Lemke, Semicond. Sci. Technol. 11, 525 (1996). 10.1088/0268-1242/11/4/011
- (1996) Semicond. Sci. Technol. , vol.11 , pp. 525
- Jost, W.¹ Weber, J.² Lemke, H.³

42
- 0037091438
- 10.1103/PhysRevB.65.165203
- S. Knack, J. Weber, H. Lemke, and H. Riemann, Phys. Rev. B 65, 165203 (2002). 10.1103/PhysRevB.65.165203
- (2002) Phys. Rev. B , vol.65 , pp. 165203
- Knack, S.¹ Weber, J.² Lemke, H.³ Riemann, H.⁴

43
- 77956305191
- in MRS Symposia Proceedings Vol. edited by D. Friedman, M. Stavola, W. Walukiewicz, and S. Zhang (Material Research Society, Warrendale, PA
- D. J. Backlund and S. K. Estreicher, in Defects in Inorganic Photovoltaic Materials, MRS Symposia Proceedings Vol. 1268, edited by, D. Friedman,,, M. Stavola,,, W. Walukiewicz,, and, S. Zhang, (Material Research Society, Warrendale, PA, 2010).
- (2010) Defects in Inorganic Photovoltaic Materials , vol.1268
- Backlund, D.J.¹ Estreicher, S.K.²

44
- 41549166225
- 10.1103/PhysRevB.77.125214
- S. K. Estreicher, M. Sanati, and N. Gonzalez Szwacki, Phys. Rev. B 77, 125214 (2008). 10.1103/PhysRevB.77.125214
- (2008) Phys. Rev. B , vol.77 , pp. 125214
- Estreicher, S.K.¹ Sanati, M.² Gonzalez Szwacki, N.³

45
- 34548821877
- 10.1103/PhysRevB.76.125204
- M. Sanati, N. Gonzalez Szwacki, and S. K. Estreicher, Phys. Rev. B 76, 125204 (2007). 10.1103/PhysRevB.76.125204
- (2007) Phys. Rev. B , vol.76 , pp. 125204
- Sanati, M.¹ Gonzalez Szwacki, N.² Estreicher, S.K.³

46
- 0036131616
- 10.4028/www.scientific.net/SSP.82-84.341
- S. K. Estreicher, D. West, and P. Ordejón, Solid State Phenom. 82-84, 341 (2002). 10.4028/www.scientific.net/SSP.82-84.341
- (2002) Solid State Phenom. , vol.82-84 , pp. 341
- Estreicher, S.K.¹ West, D.² Ordejón, P.³

47
- 5044235204
- 10.1103/PhysRevB.68.035210
- D. West, S. K. Estreicher, S. Knack, and J. Weber, Phys. Rev. B 68, 035210 (2003). 10.1103/PhysRevB.68.035210
- (2003) Phys. Rev. B , vol.68 , pp. 035210
- West, D.¹ Estreicher, S.K.² Knack, S.³ Weber, J.⁴

48
- 0000182949
- 10.1103/PhysRevB.60.5375
- S. K. Estreicher, Phys. Rev. B 60, 5375 (1999). 10.1103/PhysRevB.60.5375
- (1999) Phys. Rev. B , vol.60 , pp. 5375
- Estreicher, S.K.¹

49
- 34548863793
- edited by D. A. Drabold and S. K. Estreicher (Springer, Berlin
- Theory of Defects in Semiconductors, edited by, D. A. Drabold, and, S. K. Estreicher, (Springer, Berlin, 2007).
- (2007) Theory of Defects in Semiconductors

50
- 0006838610
- 10.1002/(SICI)1097-461X(1997)65:5<453::AID-QUA9>3.0.CO;2-V
- D. Sánchez-Portal, P. Ordejón, E. Artacho, and J. M. Soler, Int. J. Quantum Chem. 65, 453 (1997). 10.1002/(SICI)1097-461X(1997)65:5<453: :AID-QUA9>3.0.CO;2-V
- (1997) Int. J. Quantum Chem. , vol.65 , pp. 453
- Sánchez-Portal, D.¹ Ordejón, P.² Artacho, E.³ Soler, J.M.⁴

51
- 0033197383
- 10.1002/(SICI)1521-3951(199909)215:1<809::AID-PSSB809>3.0.CO;2-0
- E. Artacho, D. Sánchez-Portal, P. Ordejón, A. García, and J. M. Soler, Phys. Status Solidi B 215, 809 (1999). 10.1002/(SICI)1521-3951(199909)215:1<809::AID-PSSB809>3.0.CO;2-0
- (1999) Phys. Status Solidi B , vol.215 , pp. 809
- Artacho, E.¹ Sánchez-Portal, D.² Ordejón, P.³ García, A.⁴ Soler, J.M.⁵

52
- 1842816907
- 10.1103/PhysRevB.13.5188
- H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
- (1976) Phys. Rev. B , vol.13 , pp. 5188
- Monkhorst, H.J.¹ Pack, J.D.²

53
- 0001644424
- 10.1103/PhysRevLett.82.2111
- A. Resende, R. Jones, S. Öberg, and P. R. Briddon, Phys. Rev. Lett. 82, 2111 (1999). 10.1103/PhysRevLett.82.2111
- (1999) Phys. Rev. Lett. , vol.82 , pp. 2111
- Resende, A.¹ Jones, R.² Öberg, S.³ Briddon, P.R.⁴

54
- 34548863793
- (Ref.)
- J. P. Goss, M. J. Shaw, and P. R. Briddon, Theory of Defects in Semiconductors (Ref.), p. 69.
- Theory of Defects in Semiconductors , pp. 69
- Goss, J.P.¹ Shaw, M.J.² Briddon, P.R.³

55
- 3442902425
- 10.1103/PhysRevLett.72.1124;
- G. Mills and H. Jonsson, Phys. Rev. Lett. 72, 1124 (1994) 10.1103/PhysRevLett.72.1124
- (1994) Phys. Rev. Lett. , vol.72 , pp. 1124
- Mills, G.¹ Jonsson, H.²

56
- 0000220710
- in edited by B. J. Berne, G. Ciccotti, and D. F. Coker (World Scientific, Singapore
- H. Jonsson, G. Mills, and K. W. Jacobsen, in Classical and Quantum Dynamics in Condensed Phase Simulations, edited by, B. J. Berne,,, G. Ciccotti,, and, D. F. Coker, (World Scientific, Singapore, 1998), p. 385.
- (1998) Classical and Quantum Dynamics in Condensed Phase Simulations , pp. 385
- Jonsson, H.¹ Mills, G.² Jacobsen, K.W.³

57
- 0034513054
- 10.1063/1.1329672;
- G. Henkelman, B. P. Uberuaga, and H. Jonsson, J. Chem. Phys. 113, 9901 (2000) 10.1063/1.1329672
- (2000) J. Chem. Phys. , vol.113 , pp. 9901
- Henkelman, G.¹ Uberuaga, B.P.² Jonsson, H.³

58
- 1242329035
- 10.1063/1.1323224
- G. Henkelman and H. Jonsson, J. Chem. Phys. 113, 9978 (2000). 10.1063/1.1323224
- (2000) J. Chem. Phys. , vol.113 , pp. 9978
- Henkelman, G.¹ Jonsson, H.²

59
- 33645426115
- 10.1103/PhysRevB.43.1993
- N. Troullier and J. L. Martins, Phys. Rev. B 43, 1993 (1991). 10.1103/PhysRevB.43.1993
- (1991) Phys. Rev. B , vol.43 , pp. 1993
- Troullier, N.¹ Martins, J.L.²

60
- 0001161603
- 10.1103/PhysRevLett.48.1425
- L. Kleinman and D. M. Bylander, Phys. Rev. Lett. 48, 1425 (1982). 10.1103/PhysRevLett.48.1425
- (1982) Phys. Rev. Lett. , vol.48 , pp. 1425
- Kleinman, L.¹ Bylander, D.M.²

61
- 0003998294
- World Scientific, Singapore
- V. L. Moruzzi and C. B. Sommers, Calculated Electronic Properties of Ordered Alloys: A Handbook (World Scientific, Singapore, 1995).
- (1995) Calculated Electronic Properties of Ordered Alloys: A Handbook
- Moruzzi, V.L.¹ Sommers, C.B.²

62
- 4243624287
- 10.1103/PhysRevB.65.024440
- J. M. Pruneda, R. Robles, S. Bouarab, J. Ferrer, and A. Vega, Phys. Rev. B 65, 024440 (2001). 10.1103/PhysRevB.65.024440
- (2001) Phys. Rev. B , vol.65 , pp. 024440
- Pruneda, J.M.¹ Robles, R.² Bouarab, S.³ Ferrer, J.⁴ Vega, A.⁵

63
- 4243943295
- 10.1103/PhysRevLett.77.3865
- J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
- (1996) Phys. Rev. Lett. , vol.77 , pp. 3865
- Perdew, J.P.¹ Burke, K.² Ernzerhof, M.³

64
- 0001563650
- 10.1103/PhysRevB.40.3979;
- O. F. Sankey and D. J. Niklewski, Phys. Rev. B 40, 3979 (1989) 10.1103/PhysRevB.40.3979
- (1989) Phys. Rev. B , vol.40 , pp. 3979
- Sankey, O.F.¹ Niklewski, D.J.²

65
- 0000304394
- 10.1103/PhysRevB.41.12750
- O. F. Sankey, D. J. Niklewski, D. A. Drabold, and J. D. Dow, Phys. Rev. B 41, 12750 (1990). 10.1103/PhysRevB.41.12750
- (1990) Phys. Rev. B , vol.41 , pp. 12750
- Sankey, O.F.¹ Niklewski, D.J.² Drabold, D.A.³ Dow, J.D.⁴

66
- 33645223673
- 10.1103/PhysRevLett.96.115504;
- D. West and S. K. Estreicher, Phys. Rev. Lett. 96, 115504 (2006) 10.1103/PhysRevLett.96.115504
- (2006) Phys. Rev. Lett. , vol.96 , pp. 115504
- West, D.¹ Estreicher, S.K.²

67
- 33847324401
- 10.1103/PhysRevB.75.075206
- D. West and S. K. Estreicher, Phys. Rev. B 75, 075206 (2007). 10.1103/PhysRevB.75.075206
- (2007) Phys. Rev. B , vol.75 , pp. 075206
- West, D.¹ Estreicher, S.K.²

68
- 2842542027
- D. A. van Wezep and C. A. J. Ammerlaan, J. Electron. Mater. 14a, 863 (1985).
- (1985) J. Electron. Mater. , vol.14 , pp. 863
- Van Wezep, D.A.¹ Ammerlaan, C.A.J.²

69
- 4243946762
- 10.1103/PhysRevB.32.7129
- D. A. van Wezep, R. van Kemp, E. G. Sieverts, and C. A. J. Ammerlaan, Phys. Rev. B 32, 7129 (1985). 10.1103/PhysRevB.32.7129
- (1985) Phys. Rev. B , vol.32 , pp. 7129
- Van Wezep, D.A.¹ Van Kemp, R.² Sieverts, E.G.³ Ammerlaan, C.A.J.⁴

70
- 4243740313
- 10.1103/PhysRevB.37.7268
- D. A. van Wezep and C. A. J. Ammerlaan, Phys. Rev. B 37, 7268 (1988). 10.1103/PhysRevB.37.7268
- (1988) Phys. Rev. B , vol.37 , pp. 7268
- Van Wezep, D.A.¹ Ammerlaan, C.A.J.²

71
- 1542701023
- M. K. Bakhadyrkhanov, S. Zainabidinov, and A. Khamidov, Fiz. Tekh. Poluprovodn. 14, 412 (1980)
- (1980) Fiz. Tekh. Poluprovodn. , vol.14 , pp. 412
- Bakhadyrkhanov, M.K.¹ Zainabidinov, S.² Khamidov, A.³

72
- 3643112827
- M. K. Bakhadyrkhanov, S. Zainabidinov, and A. Khamidov, [Sov. Phys. Semicond. 14, 243 (1980)].
- (1980) Sov. Phys. Semicond. , vol.14 , pp. 243
- Bakhadyrkhanov, M.K.¹ Zainabidinov, S.² Khamidov, A.³

73
- 0342807791
- 10.1103/PhysRevB.39.1255
- F. H. M. Spit, D. Gupta, and K. N. Tu, Phys. Rev. B 39, 1255 (1989). 10.1103/PhysRevB.39.1255
- (1989) Phys. Rev. B , vol.39 , pp. 1255
- Spit, F.H.M.¹ Gupta, D.² Tu, K.N.³

74
- 0011470173
- in edited by K. A. Jackson and W. Schröter (Wiley-VCH, Weinheim
- G. D. Watkins, in Handbook of Semiconductor Technology, Electronic Structure and Properties of Semiconductors, edited by, K. A. Jackson, and, W. Schröter, (Wiley-VCH, Weinheim, 2000), Vol. 1, Chap.
- (2000) Handbook of Semiconductor Technology, Electronic Structure and Properties of Semiconductors , vol.1
- Watkins, G.D.¹

75
- 0000836363
- 10.1103/PhysRev.54.899
- L. Pauling, Phys. Rev. 54, 899 (1938). 10.1103/PhysRev.54.899
- (1938) Phys. Rev. , vol.54 , pp. 899
- Pauling, L.¹

76
- 0023061061
- 10.1002/pssa.2210990150
- H. Kitagawa and H. Nakashima, Phys. Status Solidi A 99, K49 (1987). 10.1002/pssa.2210990150
- (1987) Phys. Status Solidi A , vol.99 , pp. 49
- Kitagawa, H.¹ Nakashima, H.²

77
- 0000356850
- 10.1063/1.119355
- A. A. Istratov, C. Flink, H. Hieslmair, T. Heiser, and E. R. Weber, Appl. Phys. Lett. 71, 2121 (1997). 10.1063/1.119355
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2121
- Istratov, A.A.¹ Flink, C.² Hieslmair, H.³ Heiser, T.⁴ Weber, E.R.⁵

78
- 0032755314
- 10.1002/(SICI)1521-396X(199901)171:1<301::AID-PSSA301>3.0.CO;2-P
- M. Seibt, H. Hedemann, A. A. Istratov, F. Riedel, A. Sattler, and W. Schröter, Phys. Status Solidi A 171, 301 (1999). 10.1002/(SICI)1521- 396X(199901)171:1<301::AID-PSSA301>3.0.CO;2-P
- (1999) Phys. Status Solidi A , vol.171 , pp. 301
- Seibt, M.¹ Hedemann, H.² Istratov, A.A.³ Riedel, F.⁴ Sattler, A.⁵ Schröter, W.⁶

79
- 3743125844
- 10.1103/PhysRevLett.69.3185
- N. T. Son, T. Gregorkiewicz, and C. A. J. Ammerlaan, Phys. Rev. Lett. 69, 3185 (1992). 10.1103/PhysRevLett.69.3185
- (1992) Phys. Rev. Lett. , vol.69 , pp. 3185
- Son, N.T.¹ Gregorkiewicz, T.² Ammerlaan, C.A.J.³

80
- 0026254970
- 10.1016/0038-1098(91)90723-9
- N. T. Son, A. B. van Oosten, and C. A. J. Ammerlaan, Solid State Commun. 80, 439 (1991). 10.1016/0038-1098(91)90723-9
- (1991) Solid State Commun. , vol.80 , pp. 439
- Son, N.T.¹ Van Oosten, A.B.² Ammerlaan, C.A.J.³

81
- 0025382962
- 10.1016/0038-1098(90)90445-H
- L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, and V. A. Khramtsov, Solid State Commun. 73, 393 (1990). 10.1016/0038-1098(90)90445-H
- (1990) Solid State Commun. , vol.73 , pp. 393
- Vlasenko, L.S.¹ Son, N.T.² Van Oosten, A.B.³ Ammerlaan, C.A.J.⁴ Lebedev, A.A.⁵ Taptygov, E.S.⁶ Khramtsov, V.A.⁷

82
- 0042971419
- 10.1007/s00339-002-1891-9
- B. Effey-Schwickert, M. Wiegand, H. Vollmer, and R. Labusch, Appl. Phys. A: Mater. Sci. Process. 77, 711 (2003). 10.1007/s00339-002-1891-9
- (2003) Appl. Phys. A: Mater. Sci. Process. , vol.77 , pp. 711
- Effey-Schwickert, B.¹ Wiegand, M.² Vollmer, H.³ Labusch, R.⁴

83
- 0012154759
- 10.1103/PhysRevB.52.16575
- G. D. Watkins and P. M. Williams, Phys. Rev. B 52, 16575 (1995). 10.1103/PhysRevB.52.16575
- (1995) Phys. Rev. B , vol.52 , pp. 16575
- Watkins, G.D.¹ Williams, P.M.²

84
- 0042976424
- 10.1088/0031-8949/1989/T25/062
- C. A. J. Ammerlaan and A. B. van Oosten, Phys. Scr. T25, 342 (1989). 10.1088/0031-8949/1989/T25/062
- (1989) Phys. Scr. , vol.25 , pp. 342
- Ammerlaan, C.A.J.¹ Van Oosten, A.B.²

85
- 0009993746
- in Semiconductor and Semimetals Vol. edited by F. Shimura (Academic, San Diego
- B. Pajot, in Oxygen in Silicon, Semiconductor and Semimetals Vol. 42, edited by, F. Shimura, (Academic, San Diego, 1994), p. 191.
- (1994) Oxygen in Silicon , vol.42 , pp. 191
- Pajot, B.¹

86
- 51249185445
- 10.1007/BF02652398
- C. E. Barnes, J. Electron. Mater. 8, 437 (1979). 10.1007/BF02652398
- (1979) J. Electron. Mater. , vol.8 , pp. 437
- Barnes, C.E.¹

87
- 0344506020
- 10.1063/1.340297
- Z. You, M. Gong, Y. Chen, and J. W. Corbett, J. Appl. Phys. 63, 324 (1988). 10.1063/1.340297
- (1988) J. Appl. Phys. , vol.63 , pp. 324
- You, Z.¹ Gong, M.² Chen, Y.³ Corbett, J.W.⁴

88
- 0842321767
- 10.1103/PhysRevB.68.233208
- A. Rockett, D. D. Johnson, S. V. Khare, and B. R. Tuttle, Phys. Rev. B 68, 233208 (2003). 10.1103/PhysRevB.68.233208
- (2003) Phys. Rev. B , vol.68 , pp. 233208
- Rockett, A.¹ Johnson, D.D.² Khare, S.V.³ Tuttle, B.R.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.