Detection of nickel in silicon by recombination lifetime measurements

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 183-188

  Savin, H ^a   Yli Koski, M ^a   Haarahiltunen, A ^a   Talvitie, H ^a   Sinkkonen, J ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Nickel; Oxide precipitates; Recombination lifetime; Silicon; Transition metals

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL DEFECTS; PRECIPITATES; SEMICONDUCTING SILICON; TRANSITION METALS; DEFECTS; NICKEL; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON WAFERS; TEMPERATURE;

CONCENTRATION LEVEL; MICRODEFECTS; OXIDE PRECIPITATES; RECOMBINATION LIFETIME MEASUREMENTS; BULK MICRODEFECTS; LIGHT ILLUMINATION; LOW CONCENTRATION LEVELS; LOW TEMPERATURES; MINORITY CARRIER; RECOMBINATION ACTIVITY; RECOMBINATION LIFETIME;

CARRIER LIFETIME; NICKEL OXIDE;

EID: 38549103598     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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