Transient ion drift detection of low level copper contamination in silicon

Applied Physics Letters

Volumn 70, Issue 26, 1997, Pages 3576-3578

  Heiser, T ^a,b   McHugo, S ^a   Hieslmair, H ^a   Weber, E R ^a  

^a Lawrence Berkeley National Laboratory   (United States)

^b UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CONTAMINATION; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; GETTERS; IONS; NUMERICAL METHODS; PARTICLE DETECTORS;

COPPER CONTAMINATION; GETTERING; TRANSIENT ION DRIFT DETECTION;

SEMICONDUCTING SILICON;

EID: 0031165241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119238     Document Type: Article

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