Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Buonassisi, T ^a   Istratov, A A ^a   Pickett, M D ^a   Marcus, M A ^b   Hahn, G ^c   Riepe, S ^d   Isenberg, J ^d   Warta, W ^d   Willeke, G ^d   Ciszek, T F ^e,f   Weber, E R ^a  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF KONSTANZ   (Germany)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^e NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^f Siliconsultant   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; MINORITY CARRIERS; NANOPRECIPITATES; NICKEL SILICIDE;

ABSORPTION SPECTROSCOPY; DIFFUSION; FLUORESCENCE; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; NICKEL COMPOUNDS; PHOTONS; SEMICONDUCTOR DEVICES; SILICON; SYNCHROTRON RADIATION; X RAYS;

PRECIPITATION (CHEMICAL);

EID: 23644454835     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1997274     Document Type: Article

References (17)

1. S. A. McHugo, A. C. Thompson, I. Ṕrichaud, and S. Martinuzzi, Appl. Phys. Lett. 72, 3482 (1998).
2. S. A. McHugo, Appl. Phys. Lett. 71, 1984 (1997).
3. S. A. McHugo, A. C. Thompson, G. Lamble, C. Flink, and E. R. Weber, Physica B 273, 274, 371 (1999).
4. T. Buonassisi, A. A. Istratov, M. Heuer, M. Marcus, R. Jonczyk, J. Isenberg, B. Lai, Z. Cai, S. Heald, W. Warta, R. Schindler, G. Willeke, and E. R. Weber, J. Appl. Phys. 97, 074901 (2005).
5. H. Hieslmair, A. A. Istratov, R. Sachdeva, and E. R. Weber, in Proceedings of the 10th NREL Workshop on Crystalline Silicon Solar Cell Materials and Processes, Copper Mountain, CO, 14-16 August 2000, p. 162
6. O. F. Vyvenko, T. Buonassisi, A. A. Istratov, H. Hieslmair, A. C. Thompson, R. Schindler, and E. R. Weber, J. Appl. Phys. 91, 3614 (2002).
7. T. Buonassisi, M. A. Marcus, A. A. Istratov, M. Heuer, T. F. Ciszek, B. Lai, Z. Cai, and E. R. Weber, J. Appl. Phys. 97, 063503 (2005).
8. T. Buonassisi, O. F. Vyvenko, A. A. Istratov, E. R. Weber, G. Hahn, D. Sontag, J. P. Rakotoniaina, O. Breitenstein, J. Isenberg, and R. Schindler, J. Appl. Phys. 95, 1556 (2004).
9. W. Warta, Sol. Energy Mater. Sol. Cells 72, 389 (2002).
10. M. A. Green, Silicon Solar Cells: Advanced Principles & Practice (University of New South Wales, Sydney, Australia, 1995), Appendix G.
11. P. A. Basore, IEEE Trans. Electron Devices 37, 337 (1990).
12. B. L. Henke, E. M. Gullikson, and J. C. Davis, At. Data Nucl. Data Tables 54, 181 (1993).
13. J. Lagowski, P. Edelman, M. Dexter, and W. Henley, Semicond. Sci. Technol. 7, A185 (1992).
14. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
15. M. A. Marcus, A. A. MacDowell, R. Celestre, E. Domning, K. Franck, A. Manceau, G. Morrison, T. Miller, H. A. Padmore, and R. E. Sublett, J. Synchrotron Radiat. 11, 239 (2004).
16. T. F. Ciszek and T. H. Wang, J. Cryst. Growth 237-239, 1685 (2002).
17. D. H. Macdonald, L. J. Geerligs, and A. Azzizi, J. Appl. Phys. 95, 1021 (2004).