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Volumn 111, Issue 3, 2012, Pages

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon

(7) Yoon, Yohan a Paudyal, Bijaya b Kim, Jinwoo a Ok, Young Woo c Kulshreshtha, Prashant d Johnston, Steve e Rozgonyi, George a

a North Carolina State University (United States)

b MKS Instruments (United States)

c GEORGIA INSTITUTE OF TECHNOLOGY (United States)

d LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

e NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; CZOCHRALSKI SILICON; LIFETIME DEGRADATION; MINORITY CARRIER LIFETIMES; NI SILICIDE; NICKEL CONTAMINATION; PHOTOCONDUCTANCE; QUASI-STEADY-STATE PHOTOCONDUCTANCE; SURFACE RECOMBINATION VELOCITIES;

DEEP LEVEL TRANSIENT SPECTROSCOPY; NICKEL COMPOUNDS; POWER QUALITY; PRECIPITATES; SILICIDES;

SILICON WAFERS;

EID: 84863160516 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3680880 Document Type: Article

Times cited : (7)

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