GdN nanoisland-based GaN tunnel junctions

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2570-2575

  Krishnamoorthy, Sriram ^a   Kent, Thomas F ^a   Yang, Jing ^a   Park, Pil Sung ^a   Myers, Roberto C ^a   Rajan, Siddharth ^a  

^a The Ohio State University   (United States)

Author keywords

GaN; GdN; light emitting diode; molecular beam epitaxy; nanoislands; Tunnel junctions

Indexed keywords

GAN; GDN; INTERBAND TUNNELING; NANO-ISLANDS; NITRIDE-BASED DEVICES; ORDERS OF MAGNITUDE; SPECIFIC RESISTIVITIES; WIDE-BAND-GAP SEMICONDUCTOR;

ALUMINUM NITRIDE; ELECTRON INJECTION; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 84879083543     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4006723     Document Type: Article

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