Enhanced output power of InGaN-based light-emitting diodes with AlGaN/GaN two-dimensional electron gas structure

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 455-457

  Lee, Jae Hoon ^a   Lee, Jung Hee ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

2 D electron gas (2DEG); AlGaN GaN; Heterostructure; InGaN; Light emitting diode (LED); Tunneling junction

Indexed keywords

2-D ELECTRON GAS (2DEG); ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; CONTACT LAYERS; HOLE INJECTION; INSERTION LAYERS; LATERAL CURRENTS; LED STRUCTURE; OUTPUT POWER; TUNNELING JUNCTIONS;

DIODES; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; LIGHT EMISSION; TUNNELING (EXCAVATION); TWO DIMENSIONAL ELECTRON GAS;

LIGHT EMITTING DIODES;

EID: 77951878656     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2042274     Document Type: Article

References (11)

1. S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts," IEEE Photon. Technol. Lett., vol.15, no.5, pp. 646-648, May 2003.
2. X. Guo and E. F. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," J. Appl. Phys., vol.90, no.8, pp. 4191-4195, Oct. 2001. (Pubitemid 33025208)
3. J. S. Jang, "High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN-GaN superlattice," Appl. Phys. Lett., vol.93, no.8, pp. 081118-081120, Aug. 2008.
4. Y. J. Liu, C. H. Yen, L. Y. Chen, T. H. Tsai, T. Y. Tsai, and W. C. Liu, "On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure," IEEE Electron Device Lett., vol.30, no.11, pp. 1149-1151, Nov. 2009.
5. S. R. Jeon, Y. H. Song, H. J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, "Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions," Appl. Phys. Lett., vol.78, no.21, pp. 3265-3267, May 2001. (Pubitemid 33611533)
6. 0.7N/GaN short-period superlattice tunneling contact layer," IEEE Electron Device Lett., vol.22, no.10, pp. 460-462, Oct. 2001.
7. 0.85N/GaN superlattice," IEEE Electron Device Lett., vol.22, no.4, pp. 160-162, Apr. 2001. (Pubitemid 32405151)
8. D. H. Youn, J. H. Lee, V. Kumar, K. S. Lee, J. H. Lee, and I. Adesida, "The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs," IEEE Trans. Electron Devices, vol.51, no.5, pp. 785-789, May 2004.
9. J. H. Lee, J. T. Oh, Y. C. Kim, and J. H. Lee, "Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone shape-patterned sapphire," IEEE Photon. Technol. Lett., vol.20, no.18, pp. 1563-1565, Sep. 15, 2008.
10. J. H. Lee, N. S. Kim, D. Y. Lee, and J. H. Lee, "Effect of residual stress and sidewall emission of InGaN-based LED by varying sapphire substrate thickness," IEEE Photon. Technol. Lett., vol.21, no.16, pp. 1151-1153, Aug. 15, 2009.
11. S. Y. Huang, R. H. Horng, P. L. Liu, J. Y. Wu, H. W. Wu, and D. S. Wuu, "Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates," IEEE Photon. Technol. Lett., vol.20, no.10, pp. 797-799, May 15, 2008.