Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers

Applied Physics Letters

Volumn 83, Issue 19, 2003, Pages 4035-4037

  Pohl, P ^a   Renner, F H ^a   Eckardt, M ^a   Schwanhausser A ^a   Friedrich, A ^a   Yuksekdag O ^a   Malzer, S ^a   Dohler G H ^a   Kiesel, P ^b   Driscoll, D ^c   Hanson, M ^c   Gossard, A C ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b PALO ALTO RESEARCH CENTER   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TUNNEL CURRENTS; ZENER TUNNELING;

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0344467128     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625108     Document Type: Article

References (11)

1. L. Esaki, Phys. Rev. 109, 603 (1957).
2. C. Zener, Proc. R. Soc. London 145, 523 (1934).
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
4. F. Capasso, Physics of Quantum Electron Devices (Springer, Berlin, 1990).
5. S. Nakagawa, E. Hall, G. Almuneau, J. K. Kim, D. A. Buell, H. Kroemer, and L. A. Coldren, Appl. Phys. Lett. 78, 1337 (2001).
6. S. Ahmed, M. R. Melloch, E. S. Harmon, D. T. McInturff, and J. M. Woodall, Appl. Phys. Lett. 71, 3667 (1997).
7. P. Specht, M. J. Cich, R. Zhao, J. Gebauer, and E. R. Weber, Proceedings of 3rd Symposium on Non-stoichiometric III-V Compounds, Erlangen, 2001 (Lehrstuhl für Mikrocharakterisierung, Erlangen, 2001).
8. G. H. Döhler, F. H. Renner, M. Eckardt, and A. C. Gossard, Proc. COMMAD (IEEE, New York, 2002), p. 275.
9. C. Kadow, J. A. Johnson, K. Kolstad, and A. C. Gossard, J. Vac Sci. Technol. B 21, 29 (2003).
10. A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, Phys. Rev. 121, 684 (1961).
11. C. Steen, P. Kiesel, S. Tautz, S. Krämer, S. Soubatch, S. Malzer, and G. H. Döhler, Physica B 308-310, 1177 (2001).