Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Applied Physics Letters

Volumn 102, Issue 21, 2013, Pages

  Darakchieva, V ^a   Boosalis, A ^b   Zakharov, A A ^c   Hofmann, T ^b   Schubert, M ^b   Tiwald, T E ^d   Iakimov, T ^a   Vasiliauskas, R ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c LUND UNIVERSITY   (Sweden)

^d J A WOOLLAM CO INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; MAPPING; MONOLAYERS; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES;

EPITAXIAL GRAPHENE; FREE CHARGE CARRIERS; HIGH TEMPERATURE; INTERFACE STRUCTURES; SI FACES; SIC SUBSTRATES; VAN HOVE SINGULARITIES;

GRAPHENE;

EID: 84879068916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808379     Document Type: Article

References (32)

1. C. Berger, Z. M. Song, T. B. Li, X. B. Li, A. Y. Ogbazghi, R. Feng, Z. T. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. de Heer, J. Phys. Chem. B 108, 19912 (2004). 10.1021/jp040650f
2. C. Berger, Z. M. Song, X. B. Li, X. S. Wu, N. Brown, C. Naud, D. Mayou, T. B. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, Science 312, 1191 (2006). 10.1126/science.1125925
3. C. Virojanadara, M. Syväjarvi, R. Yakimova, L. I. Johansson, A. A. Zakharov, and T. Balasubramanian, Phys. Rev. B 78, 245403 (2008). 10.1103/PhysRevB.78.245403
4. Y. M. Lin, H. Y. Chiu, K. A. Jenkins, D. B. Farmer, P. Avouris, and A. Valdes-Garcia, IEEE Electron. Device Lett. 31, 68 (2010) 10.1109/LED.2009. 2034876.
5. W. de Heer, C. Berger, M. Ruan, M. Sprinkle, X. Li, Y. Hu, B. Zhang, J. Hankinson, and E. Conrad, Proc. Natl. Acad. Sci. U.S.A. 108, 16900 (2011). 10.1073/pnas.1105113108
6. Y. M. Lin, A. Valdes-Garcia, S. J. Han, D. B. Farmer, I. Meric, Y. N. Sun, Y. Q. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris, and K. A. Jenkins, Science 332, 1294 (2011). 10.1126/science.1204428
7. Y. Q. Wu, K. A. Jenkins, A. Valdes-Garcia, D. B. Farmer, Y. Zhu, A. A. Bol, C. Dimitrakopoulos, W. J. Zhu, F. M. Xia, P. Avouris, and Y. M. Lin, Nano Lett. 12, 3062 (2012). 10.1021/nl300904k
8. A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M. G. Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, and F. Sirotti, Phys. Rev. B 82, 125445 (2010). 10.1103/PhysRevB.82.125445
9. A. Ouerghi, R. Belkhou, M. Marangolo, M. G. Silly, S. El Moussaoui, M. Eddrief, L. Largeau, M. Portail, and F. Sirotti, Appl. Phys. Lett. 97, 161905 (2010). 10.1063/1.3497287
10. J. L. Tadesco, G. G. Jernigan, J. C. Culberston, J. K. Hite, Y. Yang, K. M. Daniels, R. L. Meyers-Ward, C. R. Eddy, Jr., J. A. Robinson, K. A. Trumbull, M. T. Wetherington, P. M. Campbell, and D. K. Gaskill, Appl. Phys. Lett. 96, 222103 (2010). 10.1063/1.3442903
11. X. Weng, J. A. Robinson, K. Trumbull, R. Cavalero, M. A. Fanton, and D. Snyder, Appl. Phys. Lett. 100, 031904 (2012). 10.1063/1.3678021
12. L. I. Johansson, S. Watcharinyanon, A. A. Zakharov, T. Iakimov, R. Yakimova, and C. Virojanadara, Phys. Rev. B 84, 125405 (2011). 10.1103/PhysRevB.84.125405
13. M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons (Springer, New York, 2004), Vol. 209.
14. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications (William Andrew Publishing, 2007).
15. V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P. O. A. Persson, F. Giuliani, E. Alves, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 94, 022109 (2009). 10.1063/1.3065030
16. V. Darakchieva, M. Schubert, T. Hofmann, B. Monemar, C. L. Hsiao, T. W. Liu, L. C. Chen, W. J. Schaff, Y. Takagi, and Y. Nanishi, Appl. Phys. Lett. 95, 202103 (2009). 10.1063/1.3261731
17. F. J. Nelson, V. K. Kamineni, T. Zhang, E. S. Comfort, J. U. Lee, and A. C. Diebold, Appl. Phys. Lett. 97, 253110 (2010). 10.1063/1.3525940
18. I. Santoso, P. K. Gogoi, H. B. Su, H. Huang, Y. Lu, D. Qi, W. Chen, M. A. Majidi, Y. P. Feng, A. T. S. Wee, K. P. Loh, T. Venkatesan, R. P. Saichu, A. Goos, A. Kotlov, M. Rübhausen, and A. Rusydi, Phys. Rev. B 84, 081403 (2011). 10.1103/PhysRevB.84.081403
19. W. Strupinski, K. Grodecki, A. Wysmolek, R. Stepniewski, T. Szkopek, P. E. Gaskell, A. Gruneis, D. Haberer, R. Bozek, J. Krupka, and J. M. Baranowski, Nano Lett. 11, 1786 (2011). 10.1021/nl200390e
20. M. Zhou, F. L. Pasquale, P. A. Dowben, A. Boosalis, M. Schubert, V. Darakchieva, R. Yakimova, L. Kong, and J. A. Kelber, J. Phys.: Condens. Matter 24, 072201 (2012). 10.1088/0953-8984/24/7/072201
21. A. Boosalis, T. Hofmann, V. Darakchieva, R. Yakimova, and M. Schubert, Appl. Phys. Lett. 101, 011912 (2012). 10.1063/1.4732159
22. J. M. Weber, V. E. Calado, and M. C. M. van de Sanden, Appl. Phys. Lett. 97, 091904 (2010). 10.1063/1.3475393
23. V. G. Kravets, A. N. Grigorenko, R. R. Nair, P. Blake, S. Anissimova, K. S. Novoselov, and A. K. Geim, Phys. Rev. B 81, 155413 (2010). 10.1103/PhysRevB.81.155413
24. M. Losurdo, M. M. Giangregorio, and G. Bruno, J. Phys. Chem. C 115, 21804 (2011). 10.1021/jp2068914
25. U. Wurstbauer, C. Röling, U. Wurstbauer, W. Wegscheider, M. Vaupel, P. Thiesen, and D. Weiss, Appl. Phys. Lett. 97, 231901 (2010). 10.1063/1.3524226
26. O. Albrektsen, R. L. Eriksen, S. M. Novikov, D. Schall, M. Karl, S. I. Bozhevolnyi, and A. C. Simonsen, J. Appl. Phys. 111, 064305 (2012). 10.1063/1.3694660
27. A. Matković, A. Beltaos, M. Milićević, U. Ralević, D. J. B. Vasić, and R. Gajic, J. Appl. Phys. 112, 123523 (2012). 10.1063/1.4771875
28. T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tadesco, and M. Schubert, Appl. Phys. Lett. 98, 041906 (2011). 10.1063/1.3548543
29. R. Vasiliauskas, M. Marinova, M. Syväjärvi, R. Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E. K. Polychroniadis, and R. Yakimova, J. Cryst. Growth 324, 7 (2011). 10.1016/j.jcrysgro.2011.03.024
30. H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi, Phys. Rev. B 77, 075413 (2008). 10.1103/PhysRevB.77.075413
31. N. Camara, G. Ruis, J. R. Huntzinger, A. Tiberj, L. Magaud, N. Mestres, P. Godignon, and J. Camassel, Appl. Phys. Lett. 93, 263102 (2008). 10.1063/1.3056655
32. R. Vasiliauskas, S. Juillaguet, M. Syväjävi, and R. Yakimova, J. Cryst. Growth 348, 91 (2012). 10.1016/j.jcrysgro.2012.03.053