Cubic SiC formation on the C-face of 6H-SiC (0 0 0 1) substrates

Journal of Crystal Growth

Volumn 348, Issue 1, 2012, Pages 91-96

  Vasiliauskas, Remigijus ^a   Juillaguet, Sandrine ^b   Syväjärvi, Mikael ^a   Yakimova, Rositza ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b CNRS   (France)

Author keywords

A1. Characterization; A1. Nucleation; A1. Polar surfaces; A3. Vapor phase epitaxy; B1. Cubic silicon carbide

Indexed keywords

AL-DOPING; CUBIC SILICON CARBIDE; GROWTH DRIVING FORCES; HOMOEPITAXIAL; LOWER CRITICAL; POLAR SURFACES; SIC FORMATION; SIC POLYTYPES; SIC SUBSTRATES; SIC(0 0 0 1); SPIRAL GROWTH; STRUCTURAL QUALITIES; SUPERSATURATION RATIO; TWIN BOUNDARIES; UNINTENTIONAL DOPING; XRD;

NUCLEATION; SILICON; SUPERSATURATION;

SILICON CARBIDE;

EID: 84860206829     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.053     Document Type: Article

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