Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry

Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

  Boosalis, A ^a   Hofmann, T ^a   Darakchieva, V ^b   Yakimova, R ^b   Schubert, M ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; DIELECTRIC FUNCTIONS; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; HARMONIC OSCILLATORS; MODEL DIELECTRIC FUNCTIONS; POLARIZABILITIES; SIC POLYTYPES; SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS; THEORETICAL PREDICTION; VACUUM ULTRAVIOLETS; VAN HOVE SINGULARITIES; VISIBLE RANGE;

EPITAXIAL GROWTH; SILICON; SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY; ULTRAVIOLET SPECTROSCOPY; VACUUM;

GRAPHENE;

EID: 84863646405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4732159     Document Type: Article

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