Investigation on the RESET switching mechanism of bipolar Cu/HfO 2/Pt RRAM devices with a statistical methodology

Journal of Physics D: Applied Physics

Volumn 46, Issue 24, 2013, Pages

  Yang, Xiaoyi ^a   Long, Shibing ^a   Zhang, Kangwei ^a   Liu, Xiaoyu ^a   Wang, Guoming ^a   Lian, Xiaojuan ^b   Liu, Qi ^a   Lv, Hangbing ^a   Wang, Ming ^a   Xie, Hongwei ^a   Sun, Haitao ^a   Sun, Pengxiao ^a   Suñé, Jordi ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SERIES RESISTANCES; STATISTICAL METHODOLOGIES; SWITCHING MECHANISM; THERMAL DISSOLUTION; U-SHAPE DISTRIBUTION;

DISSOLUTION; ELECTRIC RESISTANCE; HAFNIUM OXIDES; RANDOM ACCESS STORAGE; SOLID ELECTROLYTES;

WEIBULL DISTRIBUTION;

EID: 84878795429     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/24/245107     Document Type: Article

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