Plasma-assisted MBE growth and characterization of InN on sapphire

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 1-9

  Ivanov, S V ^a   Shubina, T V ^a   Jmerik, V N ^a   Vekshin, V A ^a   Kop'ev, P S ^a   Monemar, B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Growth models; A1. Morphological stability; A1. Optical spectroscopy; A3. Molecular beam epitaxy; B1. InN; B2. Semiconducting indium compounds

Indexed keywords

CATHODOLUMINESCENCE; LIGHT ABSORPTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMICS; X RAY ANALYSIS;

GROWTH MODELS; INN; MORPHOLOGICAL STABILITY; OPTICAL SPECTROSCOPY;

SAPPHIRE;

EID: 3342996867     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.027     Document Type: Conference Paper

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