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Volumn 96, Issue 14, 2010, Pages

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(7) Dasgupta, Sansaptak a Nidhi, a Brown, David F a Wu, Feng a Keller, Stacia a Speck, James S a Mishra, Umesh K a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP MATERIALS; CONTACT REGIONS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; NONALLOYED OHMIC CONTACT; PARASITIC ELEMENT; SELF-ALIGNED; SELF-ALIGNED DEVICES; THREE-DIMENSIONAL ELECTRONS;

CONTACT RESISTANCE; CRYSTAL GROWTH; ELECTRIC CONTACTORS; ELECTRON MOBILITY; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951165875 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374331 Document Type: Article

Times cited : (126)

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