On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes

IEEE/OSA Journal of Display Technology

Volumn 9, Issue 4, 2013, Pages 226-233

  Zhang, Zi Hui ^a   Tan, Swee Tiam ^a   Ju, Zhengang ^a   Liu, Wei ^a   Ji, Yun ^a   Kyaw, Zabu ^a   Dikme, Yilmaz ^b   Sun, Xiao Wei ^a   Demir, Hilmi Volkan ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b AIXaTech GmbH   (Germany)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

GaN; InGaN; light emitting diode (LED); quantum confined Stark effect (QCSE); Si doping

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY; GAN; INGAN; INGAN/GAN LIGHTEMITTING DIODES (LEDS); INTERNAL POLARIZATION FIELDS; QUANTUM-CONFINED STARK EFFECT; RADIATIVE RECOMBINATION RATE; SI-DOPING;

OPTOELECTRONIC DEVICES; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; SILICON;

LIGHT EMITTING DIODES;

EID: 84875630920     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2012.2204858     Document Type: Article

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