Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition

Journal of Physics D: Applied Physics

Volumn 44, Issue 10, 2011, Pages

  Lee, Sang Jun ^a   Han, Sang Heon ^a,b   Cho, Chu Young ^a   Lee, S P ^a   Noh, D Y ^a   Shim, Hyun Wook ^b   Kim, Yong Chun ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; ALGAN/GAN; BARRIER HEIGHTS; EXTERNAL QUANTUM EFFICIENCY; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; HOLE INJECTION; INGAN/GAN; LIGHT OUTPUT POWER; MULTIPLE QUANTUM WELLS; OUTPUT POWER; P-TYPE; POTENTIAL SPIKE;

ALUMINUM; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

LIGHT EMITTING DIODES;

EID: 79952144864     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/10/105101     Document Type: Article

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