Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

IEEE Photonics Technology Letters

Volumn 22, Issue 20, 2010, Pages 1506-1508

  Lee, Ya Ju ^a   Chen, Chih Hao ^a   Lee, Chia Jung ^a  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

Efficiency droop; InGaN; light emitting diode (LED)

Indexed keywords

BANDBENDING; GREEN LIGHT; HOLE WAVE FUNCTIONS; INDIUM GALLIUM NITRIDE; INGAN; INGAN QW; INJECTED ELECTRONS; INTERNAL QUANTUM EFFICIENCY; LIGHT-EMITTING DIODE (LED); P-TYPE; QUANTUM WELL; RADIATIVE RECOMBINATION; TRANSPORT EFFICIENCY;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 77957604749     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2065221     Document Type: Article

References (10)

1. M. H. Crawford, "LEDs for solid-state lighting: Performance challenges and recent advances," IEEE J. Sel. Topics Quantum Electron., vol.15, no.4, pp. 1028-1040, Jul./Aug. 2009.
2. I. V. Rozhansky and D. A. Zakheim, "Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping," Phys. Stat. Sol. (c), vol.3, no.6, pp. 2160-2164, 2006.
3. A. Y. Kim, W. Götz, D. A. Steigerwald, J. J. Wierer, N. F. Gardner, J. Sun, S. A. Stockman, P. S. Martin, M. R. Krames, R. S. Kern, and F. M. Steranka, "Performance of high-power AlInGaN light emitting diodes," Phys. Stat. Sol. (a), vol.188, no.1, pp. 15-21, 2001.
4. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of effciency droop in GaN-based light-emitting diodes," Appl. Phys. Lett., vol.91, 2007, Article 183507.
5. Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence," Appl. Phys. Lett., vol.91, 2007, Article 1411013.
6. A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Larinovich, Y. T. Rebane, D. V. Tarkhin, and Y. G. Shreter, "Effect of the jouleheating on the quantum effciency and choice of thermal conditionsfor highpower blue InGaN/GaN LEDs," Semiconductors, vol.40, pp. 605-610, 2006.
7. Y. Yang, X. A. Cao, and C. H. Yan, "Rapid efficiency roll-off in highquality green light-emitting diodes on freestanding GaN substrates," Appl. Phys. Lett., vol.94, 2009, Article 041117.
8. C.-H. Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai, and S. J. Chang, "Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs," IEEE Photon. Technol. Lett., vol.20, no.13, pp. 1142-1144, Jul. 1, 2008.
9. L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hua, "High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes," Appl. Phys. Lett., vol.95, 2009, Article 211104-1-211104-211113
10. G. E. Cragg and A. L. Efros, "Suppression of Auger processes in confined structures," Nano Lett., vol.10, pp. 313-317, 2010.