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Volumn 96, Issue 12, 2010, Pages

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

(7) Zhu, Di a Noemaun, Ahmed N a Schubert, Martin F a Cho, Jaehee a Schubert, E Fred a Crawford, Mary H b Koleske, Daniel D b

a Research Rensselaer Polytechnic Institute (United States)

b SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLOCKING LAYERS; CARRIER DISTRIBUTIONS; ELECTRON CAPTURE; HIGH AL CONTENT; HIGH CURRENTS; HOLE DISTRIBUTION; HOLE TRANSPORTS; OUTPUT POWER; P-DOPING; QUANTUM BARRIERS; QUANTUM WELL; SI-DOPING;

DOPING (ADDITIVES); ELECTRONS; LIGHT EMISSION; QUANTUM CHEMISTRY;

LIGHT EMITTING DIODES;

EID: 77950329789 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3371812 Document Type: Article

Times cited : (40)

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