Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Zheng, Zhiyuan ^a   Chen, Zimin ^a   Xian, Yulun ^a   Fan, Bingfeng ^a   Huang, Shanjin ^a   Jia, Weiqing ^a   Wu, Zhisheng ^a   Wang, Gang ^a   Jiang, Hao ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; CAPACITANCE MODULATION; CAPACITANCE VOLTAGE; CURRENT SPREADING; CURRENT VOLTAGE; DELTA-DOPED LAYERS; DOMINANT MECHANISM; ESD ENDURANCE; INFRARED MICROSCOPY; NITRIDE BASED LIGHT EMITTING DIODES; QUALITY IMPROVEMENT;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; LIGHT EMISSION; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 80053178517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3637599     Document Type: Article

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