Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

Optics Express

Volumn 19, Issue 15, 2011, Pages 14182-14187

  Wang, Lei ^a   Lu, Cimang ^a   Lu, Jianing ^a   Liu, Lei ^a   Liu, Ningyang ^a   Chen, Yujie ^b   Zhang, Yanfeng ^b   Gu, Erdan ^b   Hu, Xiaodong ^a  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; LIGHT EMISSION; LIGHT EMITTING DIODES; PHASE SPACE METHODS; POISSON EQUATION;

AUGER RECOMBINATION; BAND FILLING EFFECTS; BLUE LIGHT; BLUE SHIFT; CARRIER DISTRIBUTIONS; CURRENT LOSS; ELECTROLUMINESCENCE SPECTRA; EXPERIMENTAL DATA; HIGH BRIGHTNESS; INGAN/GAN; INGAN/GAN QUANTUM WELL; INJECTED CARRIERS; INJECTED CURRENT; LIGHT OUTPUT POWER; NON-RADIATIVE RECOMBINATIONS; PHASE SPACES; RADIATIVE RECOMBINATION; RECOMBINATION PROCESS; RECOMBINATION RATE; SELF-CONSISTENT SOLUTION; SHOCKLEY-READ-HALL; STATISTICAL WEIGHT;

LIGHT;

EID: 79960519806     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.014182     Document Type: Article

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