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Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers

(4) Park, Seoung Hwan a Ahn, Doyeol b Koo, Bun Hei c Oh, Jae Eung c,d

a Catholic University of Daegu (South Korea)

b University of Seoul (South Korea)

c WOOREE LST Co Ltd (South Korea)

d Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; DIFFERENTIAL GAIN; INGAN/GAN; MULTIBAND EFFECTIVE MASS THEORY; OPTICAL MATRIX ELEMENT; QUANTUM WELL; QUANTUM WELL STRUCTURES; TRANSITION WAVELENGTHS; WELL WIDTH;

OPTICAL GAIN; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

STRUCTURE (COMPOSITION);

EID: 76449103035 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3300840 Document Type: Article

Times cited : (34)

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