Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

Optics Express

Volumn 18, Issue 6, 2010, Pages 5466-5471

  Son, Jun Ho ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; TENSILE STRESS;

BANDBENDING; EXTERNAL STRESS; GAN EPILAYERS; INGAN QUANTUM WELLS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; NI METAL; OUTPUT POWER; PIEZOELECTRIC POLARIZATIONS; QUANTUM-CONFINED STARK EFFECT; STRAIN ENGINEERING;

QUANTUM EFFICIENCY;

GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPRESSIVE STRENGTH; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; MECHANICAL STRESS; SEMICONDUCTOR; YOUNG MODULUS;

COMPRESSIVE STRENGTH; COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELASTIC MODULUS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LIGHTING; MODELS, CHEMICAL; SEMICONDUCTORS; STRESS, MECHANICAL;

EID: 77949595942     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.005466     Document Type: Article

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