Si delta doping in a GaN barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet light-emitting diode

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Kwon, Min Ki ^a   Park, Il Kyu ^a   Baek, Sung Ho ^a   Kim, Ja Yeon ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIQUANTUM WELLS; SI DELTA DOPING; TEMPERATURE DEPENDENCE; ULTRAVIOLET LIGHT-EMITTING DIODE;

DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING INDIUM COMPOUNDS; SILICON; THERMODYNAMIC STABILITY; ULTRAVIOLET RADIATION; VOLTAGE CONTROL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20944451895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1904151     Document Type: Article

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