Silicon multi-nanochannel FETs to improve device uniformity/stability and femtomolar detection of insulin in serum

Biosensors and Bioelectronics

Volumn 45, Issue 1, 2013, Pages 245-251

  Regonda, Suresh ^a   Tian, Ruhai ^a   Gao, Jinming ^a   Greene, Serena ^b   Ding, Jiahuan ^b   Hu, Walter ^a  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b Diagtronix Inc   (United States)

Author keywords

Bio FETs; Biosensor; Diabetes; Insulin; Nanowire; PH sensing; Si nanograting

Indexed keywords

3-AMINOPROPYLTRIETHOXYSILANE; BIO-FETS; DEVICE PERFORMANCE; DOPANT FLUCTUATION; LIMIT OF DETECTION; NANOGRATING; PH SENSING; SUBTHRESHOLD SLOPE;

BIOSENSORS; BODY FLUIDS; MEDICAL PROBLEMS; NANOWIRES; SILICON;

INSULIN;

3 AMINOPROPYLTRIETHOXYSILANE; BUFFER; INSULIN; NANOCHANNEL; NANOWIRE; SILICON;

ARTICLE; BIOSENSOR; BLOOD ANALYSIS; COMPOSITE MATERIAL; CONTROLLED STUDY; DILUTION; ELECTRIC POTENTIAL; EQUIPMENT DESIGN; FIELD EFFECT TRANSISTOR; HUMAN; INSULIN BLOOD LEVEL; LIMIT OF DETECTION; MATERIAL COATING; MOLECULAR STABILITY; NANODEVICE; PERFORMANCE MEASUREMENT SYSTEM; PH; PROCESS CONTROL; PROCESS DESIGN; PROCESS DEVELOPMENT; PROCESS OPTIMIZATION; PROCESS TECHNOLOGY; SENSITIVITY ANALYSIS; SURFACE PROPERTY;

BIOSENSING TECHNIQUES; HUMANS; HYDROGEN-ION CONCENTRATION; INSULIN; LIMIT OF DETECTION; NANOSTRUCTURES; NANOWIRES; SILANES; SILICON;

EID: 84875268919     PISSN: 09565663     EISSN: 18734235     Source Type: Journal    
DOI: 10.1016/j.bios.2013.01.027     Document Type: Article

References (47)

1. Asenov A., Brown A.R., Davies J.H., Kaya S., Slavcheva G. IEEE Transactions on Electron Devices 2003, 50(9):1837-1852.
2. Ashcroft B., Takulapalli B., Yang J., Laws G.M., Zhang H.Q., Tao N.J., Lindsay S., Gust D., Thornton T.J. Physica Status Solidi B-Basic Research 2004, 241(10):2291-2296.
3. Bergveld, P., 2003. In: Proceedings of the IEEE Sensor Conference Toronto. pp. 1-26.
4. Bergveld P., Sibbald A. Comprehensive Analytical Chemistry 1988, XXIII.
5. Besteman K., Lee J.O., Wiertz F.G.M., Heering H.A., Dekker C. Nano Letters 2003, 3(6):727-730.
6. Bonab, J.A.F., Abtahi, S.E., Hosseini, S.E., 2009. The effects of random distribution fluctuations of dopants on SOI-MOSFET performance. In: Proceedings of the 2009 IEEE International Conference of Electron Devices and Solid-State Circuits. pp. 67-70.
7. Chen Y., Wang X., Erramilli S., Mohanty P., Kalinowski A. Applied Physics Letters 2006, 89(22):1-3.
8. Cui Y., Wei Q.Q., Park H.K., Lieber C.M. Science 2001, 293(5533):1289-1292.
9. Dong Rip, Kim C.H.L., Xiaolin Zheng Nano Letters 2009, 9(5):1984-1988.
10. Elfstrom N., Juhasz R., Sychugov I., Engfeldt T., Karlstrom A.E., Linnros J. Nano Letters 2007, 7:2608-2612.
11. Elfstrom N., Linnros J. Nanotechnology 2008, 19(23):1-5.
12. Elibol O.H., Morisette D., Akin D., Denton J.P., Bashir R. Applied Physics Letters 2003, 83(22):4613-4615.
13. Fung C.D., Cheung P.W., Ko W.H. IEEE Transactions on Electron Devices 1986, 33(1):8-18.
14. Gao X.P.A., Zheng G.F., Lieber C.M. Nano Letters 2010, 10(2):547-552.
15. Gao Z.Q., Agarwal A., Trigg A.D., Singh N., Fang C., Tung C.H., Fan Y., Buddharaju K.D., Kong J.M. Analytical Chemistry 2007, 79(9):3291-3297.
16. Golub A.A., Zubenko A.I., Zhmud B.V. Journal of Colloid and Interface Science 1996, 179(2):482-487.
17. Gould R.D., Awan S.A. Thin Solid Films 2003, 433(1-2):309-314.
18. Grigorescu A.E., van der Krogt M.C., Hagen C.W., Kruit P. Journal of Vacuum Science & Technology B 2007, 25(6):1998-2003.
19. Henschel W., Wahlbrink T., Georgiev Y.M., Lemme M., Mollenhauer T., Vratzov B., Fuchs A., Kurz H., Kittler M., Schwierz F. Solid-State Electronics 2004, 48(5):739-745.
20. Hirohata Y., Shimamoto N., Hino T., Yamashima T., Yabe K. Thin Solid Films 1994, 253(1-2):425-429.
21. Kargar A. Chinese Physics Letters 2009, 26(6).
22. Kim A., Ah C.S., Yu H.Y., Yang J.H., Baek I.B., Ahn C.G., Park C.W., Jun M.S., Lee S. Applied Physics Letters 2007, 91(10):1-3.
23. Kong J., Franklin N.R., Zhou C.W., Chapline M.G., Peng S., Cho K.J., Dai H.J. Science 2000, 287(5453):622-625.
24. Li Z., Chen Y., Li X., Kamins T.I., Nauka K., Williams R.S. Nano Letters 2004, 4(2):245-247.
25. Lin H.C., Su C.J., Hsiao C.Y., Yang Y.S., Huang T.Y. Applied Physics Letters 2007, 91:20.
26. Masood M.N., Chen S., Carlen E.T., van den Berg A. ACS Applied Materials & Interfaces 2010, 2(12):3422-3428.
27. Mizuno T., Okamura J., Toriumi A. IEEE Transactions on Electron Devices 1994, 41(11):2216-2221.
28. Nair P.R., Alam M.A. IEEE Transactions on Electron Devices 2007, 54(12):3400-3408.
29. Nair P.R., Alam M.A. Nano Letters 2008, 8(5):1281-1285.
30. Patolsky F., Lieber C.M. Materials Today 2005, 8(4):20-28.
31. Patolsky F., Zheng G.F., Lieber C.M. Analytical Chemistry 2006, 78(13):4260-4269.
32. Plummer J.D. Silicon VLSI technology Fundamentals. Practise and Modeling 2000.
33. Regonda S., Aryal M., Hu W.C. Journal of Vacuum Science & Technology B 2008, 26(6):2247-2251.
34. Shen Y., Kim J., Strittmatter E.F., Jacobs J.M., Camp D.G., Fang R., Tolié N., Moore R.J., Smith R.D. Proteomics 2005, 5(15):4034-4045.
35. Siu W.M., Cobbold R.S.C. IEEE Transactions on Electron Devices 1979, 26(11):1805-1815.
36. Stern E., Klemic J.F., Routenberg D.A., Wyrembak P.N., Turner-Evans D.B., Hamilton A.D., LaVan D.A., Fahmy T.M., Reed M.A. Nature 2007, 445(7127):519-522.
37. Stern E., Wagner R., Sigworth F.J., Breaker R., Fahmy T.M., Reed M.A. Nano Letters 2007, 7:3405-3409.
38. Stern E., Vacic A., Reed M.A. IEEE Transactions on Electron Devices 2008, 55(11):3119-3130.
39. Sze S.M. Physics of Semiconductor Devices 2007, John Wiley & Sons, New York. 3rd ed.
40. Teo B.K., Sun X.H. Chemical Reviews 2007, 107(5):1454-1532.
41. Tian R., Regonda S., Gao J., Liu Y., Hu W. Lab on a Chip 2011, 11(11):1952-1961.
42. Trivedi K., Yuk H., Floresca H.C., Kim M.J., Hu W. Nano Letters 2011, 11(4):1412-1417.
43. Vasileska, D., Gross, W.J., Ferry, D.K., 1998. In: Proceedings of the 1998 Sixth International Workshop on Computational Electronics. pp. 259-226.
44. Vila M., Prieto C., Ramirez R. Thin Solid Films 2004, 459(1-2):195-199.
45. Xinrong Yang W., Frensley, Dian Zhou, Hu W. IEEE Transactions on Nanotechnology 2012, 11(3):501-512.
46. Yates D.E., Levine S., Healy T.W. Journal of Chemical Society-Faraday Transactions I 1974, 70:1807-1818.
47. Zambom L.D., Mansano R.D., Mousinho A.P. Microelectronics Journal 2009, 40(1):66-69.