Performance analysis of Si nanowire biosensor by numerical modeling for charge sensing

IEEE Transactions on Nanotechnology

Volumn 11, Issue 3, 2012, Pages 501-512

  Yang, Xinrong ^a   Frensley, William R ^a   Zhou, Dian ^a   Hu, Wenchuang ^a  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

Biosensor; modeling; simulation; SiNR; SiNW

Indexed keywords

BACK GATES; BIOMOLECULE DETECTION; CHARGE SENSING; DISTRIBUTED TARGET; DOWN-SCALING; EXPERIMENTAL SETUP; FERMI-DIRAC; HIGH CONCENTRATION; LOW CONCENTRATIONS; MAXIMUM SENSITIVITY; NUMERICAL CONVERGENCE; NUMERICAL MODELING; NUMERICAL STUDIES; OXIDE SURFACE; PERFORMANCE ANALYSIS; PHYSICAL MODEL; POISSON-BOLTZMAN; REVERSE EFFECTS; SENSITIVE DETECTION; SENSOR SENSITIVITY; SI NANOWIRE; SIMULATION; SINR; SINW; SITE BINDING; SURFACE-TO-VOLUME RATIO;

COMPUTER SIMULATION; FUNCTIONAL GROUPS; MODELS; NANOWIRES; SENSORS; SILICON;

BIOSENSORS;

EID: 84860842442     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2178101     Document Type: Article

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