Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1998-2003

  Grigorescu, Anda E ^a   Van Der Krogt, Marco C ^b   Hagen, Cees W ^a   Kruit, Pieter ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN INORGANIC COMPOUNDS; LINEWIDTH; MICROELECTRONICS; SILICON;

DENSE STRUCTURES; HYDROGEN SILSESQUIOXANE RESIST LAYERS;

ELECTRON BEAM LITHOGRAPHY;

EID: 37149031270     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2794316     Document Type: Article

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