Stability of HSQ nanolines defined by e-beam lithography for Si nanowire field effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2247-2251

  Regonda, Suresh ^a   Aryal, Mukti ^a   Hu, Wenchuang ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIOSENSING APPLICATIONS; CAPILLARY FORCES; CRITICAL ASPECT RATIOS; EXPERIMENTAL DATUMS; GATE CONFIGURATIONS; HIGH ASPECT RATIOS; INSULATOR SUBSTRATES; METAL PADS; NANOLINES; NANOSCALE; OXYGEN CONTENTS; SI NANOWIRES; SWELLING STRAINS; THEORETICAL MODELS; YOUNG'S MODULUS;

ASPECT RATIO; ELASTIC MODULI; ELASTICITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; EXPERIMENTS; HYDROGEN; METAL WORKING; NANOWIRES; OXYGEN; PHOTORESISTS; PRESSURE DROP; SILICON; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 57249104958     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3002561     Document Type: Article

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