Modeling ALD surface reaction and process dynamics using absolute reaction rate theory

Chemical Vapor Deposition

Volumn 19, Issue 1-3, 2013, Pages 4-14

  Travis, Curtisha D ^a   Adomaitis, Raymond A ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Alumina ALD; Atomic layer deposition; Reaction kinetics; Simulation; Transition state theory

Indexed keywords

DEPOSITION REACTIONS; FUNCTION OF PRESSURE; LIGAND EXCHANGE REACTIONS; PHYSICALLY BASED MODELS; PRECURSOR PARTIAL PRESSURE; SIMULATION; SURFACE CONCENTRATION; TRANSITION STATE THEORIES;

ALUMINA; DEPOSITION; DYNAMICS; RATE CONSTANTS; REACTION KINETICS; SURFACE REACTIONS;

ATOMIC LAYER DEPOSITION;

EID: 84875182474     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.201206985     Document Type: Article

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